Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Michon, A.; Vézian, S.; Ouerghi, Abdelkarim; Zieliński, Marcin; Chassagne, Thierry; Portail, Marc

doi:10.1063/1.3503972

Cited by 72 publications

(71 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most widespread approach consists in heating SiC to a high enough temperature for silicon to sublimate from the surface, leaving behind carbon atoms that may then form graphene. A less studied approach (especially from the point of view of the processes at play during growth) involves molecular beam epitaxy [248,107] and CVD [249,250] on SiC. In this section we review experimental observations of graphene growth using methods mentioned above.…”

Section: Growth Methodsmentioning

confidence: 99%

Growth of epitaxial graphene: Theory and experiment

et al. 2014

View full text Add to dashboard Cite

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of the most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.

show abstract

Section: Growth Methodsmentioning

confidence: 99%

Growth of epitaxial graphene: Theory and experiment

et al. 2014

View full text Add to dashboard Cite

show abstract

“…[24,25] Depending on the growth conditions, either the samples are hole-doped and the graphene lies on a hydrogen-passivated SiC surface, or they are n-doped and the graphene lies on a carbon-rich buffer layer. [26,27].…”

Section: Methodsmentioning

confidence: 99%

Magnetoresistance of disordered graphene: From low to high temperatures

Jabakhanji

Kazazis²,

Desrat

et al. 2014

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120 − 240 K. The maximum is observed at intermediate magnetic fields (B = 2 − 6 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with T and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.

show abstract

“…Silicon sublimes from the surface layers while the carbon atoms left behind on the surface form a carbon buffer layer and graphene layer(s). Epitaxial growth of a few layer graphene on SiC has also shown to be possible through chemical vapor deposition of carbon on the surface using propane as a source gas under optimized growth conditions [12,13]. Other methods to obtain large area graphene include chemical vapor deposition (CVD) growth on metals [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

View full text Add to dashboard Cite

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0001) The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions.Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm 2 /Vs) and low carrier density (<0.9x10 13 cm -2 ) in quasifree-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.

show abstract

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Cited by 72 publications

References 24 publications

Growth of epitaxial graphene: Theory and experiment

Growth of epitaxial graphene: Theory and experiment

Magnetoresistance of disordered graphene: From low to high temperatures

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Contact Info

Product

Resources

About