Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron-doped silicon layer

Abstract

Without buffer layers, a lightly boron-doped epitaxial layer of good crystalline quality has been directly grown on a heavily boron-doped silicon layer by eliminating misfit dislocations in the heavily boron-doped layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of an n ϩ /p diode fabricated in the epitaxial silicon has been measured to be 0.6 nA/cm 2 at 5 V.

X-ray topography and diffraction studies of misfit dislocation nucleation in Si-based structures

“…Differences in the segregation coefficients of boron and germanium in silicon dictates that uniform compensation will not be achieved throughout the length of the boule, showing that this technique does not represent a viable option for large-scale manufacturing. In another case, an oxide ring had been deposited on the substrate before epitaxial growth to block the extension of misfit dislocations, but again, this process is not commercially viable (Lee et al . 1994).…”