Direct fabrication of micro mesas by VUV laser ablation of polymers: PMMA (polymethylmethacrylate)

Lapczyna, Markus; Stuke, M.

doi:10.1007/s003390050698

Cited by 38 publications

(15 citation statements)

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“…In addition, the short laser wavelength and high optical absorption coefficient, permit much more precise patterning of PMMA by ablation i.e. with sub-micron spatial and depth resolution [1,2,11] .…”

Section: Figurementioning

confidence: 99%

“…This, together with a sub-micron spatial resolution capability, suggests that laser ablation in the VUV may become increasingly more important for some specialized manufacturing routes in optoelectronics. For example, VUV laser ablation has been used to fabricate sub-micron period relief gratings [1] and micro mesas [2] in polymethylmethacrylate (PMMA), a material that has importance in low-cost photonic devices. There is also promise in using the VUV laser for processing glasses [3] and, indeed, some success in micromachining glass by ablation has been reported [4] .…”

Section: Introductionmentioning

confidence: 99%

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F 2 -laser applications for machining optoelectronic microstructures

Dyer¹,

Johnson²,

Maswadi³

et al. 2003

SPIE Proceedings

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We report studies of material processing using the VUV F 2 laser which, by virtue of its low threshold, high resolution 'machining' capability, may bring advantage to laser-based optoelectronic and photonic device fabrication. For example, probe beam deflection and etch rate studies of polymethylmethacrylate (PMMA) show this has a low ablation threshold, F T =20mJcm -2 , and a large effective absorption coefficient, 1.6 ×10 5 cm -1 , at 157nm, permitting high-resolution etching at modest fluence. The smooth ablated surfaces and low degree of thermal damage obtained with this laser make it well suited to machining structures such as relief gratings in PMMA. We also describe new results on producing fibre Bragg gratings with the 157nm laser. It is shown that these gratings can be written in a non-sensitised single mode fibre (Corning HI 980) with a low fluence and low total dose.

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Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

F 2 -laser applications for machining optoelectronic microstructures

Dyer¹,

Johnson²,

Maswadi³

et al. 2003

SPIE Proceedings

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“…We present the results of a study of the ablation of poly(methyl methacrylate) (PMMA; which is widely used in electron-beam and X-ray lithography [26][27][28][29] so that its radiation-chemical and -physical properties are well understood 16,[30][31][32][33][34][35] irradiated by intense XUV/SXR radiation emitted from Z-pinch and laser-produced plasmas. By varying the operational parameters of these two sources we covered a wide range of photon energy, pulse energy, and pulse durations of the XUV/SXR radiation with which the PMMA samples were irradiated.…”

Section: Introductionmentioning

confidence: 99%

Ablation of Poly(methyl Methacrylate) by a Single Pulse of Soft X-Rays Emitted From Z-Pinch and Laser-Produced Plasmas

et al. 2002

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The efficiency of ablation induced in poly(methyl methacrylate) (PMMA) by single soft X-ray pulses emitted from Z-pinch and laser-produced plasmas was determined. X-ray ablation of PMMA was found to be less efficient than that of teflon (PTFE). Nonthermal effects of the radiation on the polymer structure play a key role in the mechanisms of the ablation, i.e. the ablation can be explained by the formation of radiation-chemical scissions of the polymer chain followed by blowoff of low-molecular fragment fluid into the vacuum. The most promising application of this phenomenon seems to be micropatterning/micromachining.

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“…The ablation ofpolymeric materials under UV or X-ray irradiation has been the subject ofnumerous research groups [1][2][3][4], due to the vast number of technological applications such as photolithography [5], micromachining [6], and imaging of biological living specimens [7]. it is therefore apparent that the understanding of the mechanisms involved in the ablative process along with the interactions and the dynamics, which describe the phenomenon, is required.…”

Section: Introductionmentioning

confidence: 99%

Laser ablation of nylon 6.6 under UV irradiation at 193 and 248 nm

et al. 1999

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We report on the ablative etching of Nylon 6.6 [-NH-(CH2)6-NH-CO-(CH2)4-CO-] at 193 urn and 248 urn, using a pulse discharged ArF and KrF excimer laser respectively. The etch rate at different fluences was determined for both wavelengths, along with other descriptive parameters such as the threshold fluence. The mass spectroscopic analysis showed that even at low laser energies there was a complete braking of the polymer chain bonds at both wavelengths. Moreover it seems that photofragments with two carbon atoms along with the C0 radical, have a higher probability to be ablated, while photofragments with three carbon atoms appear only under irradiation at 248 nm. No significant photofragments beyond 50 amu were recorded at both laser wavelengths.

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Direct fabrication of micro mesas by VUV laser ablation of polymers: PMMA (polymethylmethacrylate)

Cited by 38 publications

References 0 publications

F 2 -laser applications for machining optoelectronic microstructures

F 2 -laser applications for machining optoelectronic microstructures

Ablation of Poly(methyl Methacrylate) by a Single Pulse of Soft X-Rays Emitted From Z-Pinch and Laser-Produced Plasmas

Laser ablation of nylon 6.6 under UV irradiation at 193 and 248 nm

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