Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model

Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reduction method to quickly and accurately construct large-signal models of semiconductor devices with consideration of thermal effects. In general, the junction voltage dimension is represented by empirical functions, whereas the junction temperature dimension is described by the first-order Taylor series approximation. The final analytical current model is a combination of two independent sets of empirical functions. These functions are constructed from pulsed I-V measurements at different ambient temperatures. The percentages of different components are controlled by the thermal level. Two commercial InGaP/GaAs heterojunction bipolar transistors are investigated to verify the effectiveness of this method. The large-signal models are implemented in Advanced Design System. Excellent agreement is achieved between measurement and simulation of the I-V characteristics, S-parameters, and power sweeps. The dimension reduction method is able to effectively reduce the number of equations and parameters because the temperature dimension is expanded by using a Taylor series. In addition, this method would be applied to the thermal modeling of various devices based on new materials or process technologies. Accordingly, the dimension reduction method is powerful and useful in fast and accurate thermal modeling of microwave semiconductor devices.

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“…n = T dev = T amb + R th × P diss (10) where V BCx , V BCi , V BEx , and V BEi are junction voltages.…”

Section: B Temperature-dependent Current Modelmentioning

confidence: 99%

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Huang

Luo

et al. 2019

IEEE Access

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Efficient and systematic extraction method for accurate determination of HBT temperature-dependent DC model parameters

Bousnina¹

2006

Microw. Opt. Technol. Lett.

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This paper presents an efficient and systematic parameter extraction method of HBT temperature‐dependent DC model, suitable for monitoring device/process development. All parameters of the model current sources, including self‐heating parameters, were extracted using a developed simple algorithm based on a set of algebraic nonlinear equations. The modeling methodology was successfully applied to predict accurately the DC characteristics of a 2 × 25 μm2 InGaP/GaAs HBT device. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2126–2131, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21867

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Novel and simple table-based HBT large-signal model

Degachi

Ghannouchi

2007

2007 50th Midwest Symposium on Circuits and Systems

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Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model

Cited by 5 publications

References 23 publications

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Efficient and systematic extraction method for accurate determination of HBT temperature-dependent DC model parameters

Novel and simple table-based HBT large-signal model

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