Efficient and systematic extraction method for accurate determination of HBT temperature-dependent DC model parameters

Abstract

This paper presents an efficient and systematic parameter extraction method of HBT temperature‐dependent DC model, suitable for monitoring device/process development. All parameters of the model current sources, including self‐heating parameters, were extracted using a developed simple algorithm based on a set of algebraic nonlinear equations. The modeling methodology was successfully applied to predict accurately the DC characteristics of a 2 × 25 μm2 InGaP/GaAs HBT device. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 2126–2131, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21867