Direct evidence for screening of the Coulomb interaction in quasi-two-dimensional systems

Zawadzki, W.; Kubisa, M.; Raymond, André; Robert, Jean-Louis; André, J.P.

doi:10.1103/physrevb.36.9297

Cited by 16 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, in the configuration of crossed electric and magnetic fields the electrons can be transferred from free conducting Landau states to localized non‐conducting acceptor states . This phenomenon was called the “boil‐off effect,” in contrast to the “freeze‐out effect” of electrons falling to the donor states at low temperatures and high magnetic fields . It was demonstrated theoretically that one acceptor can localize more than one conduction electron …”

Section: Acceptor‐doped Samplesmentioning

confidence: 99%

Magnetic‐TEGFET: Transistor Without a Gate

Raymond

Chaubet

Delgard

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

Low-temperature current-voltage characteristics of n-type GaAs/GaAlAs quantum wells delta-doped in GaAs channel with Be acceptors are studied in the presence of a magnetic field. Negatively charged acceptor ions localize 2D conduction electrons by a combined effect of a quantum well and magnetic field parallel to the growth direction. In acceptor-doped samples, the Hall electric field plays the role of the gate voltage. It is shown that at magnetic fields as weak as 1.5 T (or higher), the drain current reaches a constant value independent of the drain voltage. This phenomenon is due to the electron localization resulting in the decrease of conducting electron density in the crossed-field configuration. The above special behavior of acceptor-doped GaAs/GaAlAs heterostructures is exploited to realize a device called Magnetic-TEGFET (Magnetic Two-dimensional Electron Gas Field Effect Transistor) operating at low temperatures. The elimination of the gate in the studied transistor suppresses the gate-to-drain leakage current, which, in the standard TEGFETs, results in the electronic shot noise.

show abstract

Section: Acceptor‐doped Samplesmentioning

confidence: 99%

Magnetic‐TEGFET: Transistor Without a Gate

Raymond

Chaubet

Delgard

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56] confined geometries has received much theoretical and experimental attention in the past several years (the list of references, although comprehensive, is not complete). The interest is motivated, in part, by technological reasons and also by the fact that shallow impurities in QW's form quasi-two-dimensional hydrogenic systems whose parameters can be controlled accurately and varied at ease.…”

Section: Introductionmentioning

confidence: 99%

<title>Raman spectroscopy of shallow impurities in semiconductor quantum-well structures</title>

Merlín

1990

Raman and Luminescence Spectroscopies in Technology II

View full text Add to dashboard Cite

A brief review is given of Raman scattering from bound electrons and holes in semiconductor superlattices. The experiments on Si (donor)-doped and Be (acceptor)-doped GaAs/AlGaAs quantum-well structures include studies of the dependence of the energy levels on the position of the impurity in the well and the well-width, and as a function of temperature, magnetic field and uniaxial stress. The data, showing reasonable agreement with theoretical predictions, reveal most of the expected features of quantum confinement effects on the impurity spectra. An extensive list of references to theoretical and related experimental work is included.

show abstract

Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions

Raymond

1988

Properties of Impurity States in Superlattice Semiconductors

View full text Add to dashboard Cite

Direct evidence for screening of the Coulomb interaction in quasi-two-dimensional systems

Cited by 16 publications

References 12 publications

Magnetic‐TEGFET: Transistor Without a Gate

Magnetic‐TEGFET: Transistor Without a Gate

<title>Raman spectroscopy of shallow impurities in semiconductor quantum-well structures</title>

Role of the Si Donors in Quantum and Ultraquantum Transport Phenomena in GaAs-GaAlAs Heterojunctions

Contact Info

Product

Resources

About