Abstract:A brief review is given of Raman scattering from bound electrons and holes in semiconductor superlattices. The experiments on Si (donor)-doped and Be (acceptor)-doped GaAs/AlGaAs quantum-well structures include studies of the dependence of the energy levels on the position of the impurity in the well and the well-width, and as a function of temperature, magnetic field and uniaxial stress. The data, showing reasonable agreement with theoretical predictions, reveal most of the expected features of quantum confin… Show more
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