Direct Characterization of Impact Ionization Current in Silicon-on-Insulator Body-Contacted MOSFETs

Abstract

This work faces the study of impact ionization in Silicon-OnInsulator transistors from the direct characterization of the body current and electrostatic potential. Body contacted devices have been fabricated for that purpose, and biased at zero-potential and zero-current conditions. The combination of both types of measurements has allowed the extraction of an updated set of parameters for the accurate calibration of the conventional stablished models used in TCAD simulations.