Direct band gaps in multiferroic h-LuFeO3

Holinsworth, B. S.; Mazumdar, Dipanjan; Brooks, Charles M.; Mundy, Julia A.; Das, Hena; Cherian, Judy G.; McGill, Stephen; Fennie, Craig J.; Schlom, Darrell G.; Musfeldt, J. L.

doi:10.1063/1.4908246

Cited by 42 publications

(25 citation statements)

References 28 publications

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“…Using the thermal and optical properties of h-LuFeO 3 , 25,32,38 we estimated that the temperature change of the h-LuFeO 3 film after absorbing a 1.0 mJ/mm 2 photon pulse to be ~ 460 K (±10%) (see S6 in the supplementary materials 4 ). The relation between the thermal strain and the fluence in Fig.…”

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confidence: 99%

“…9,16,25 In the restrained thermal expansion, the thermal strains were measured in a laser-pump Xray-probe style [26][27][28][29] , as shown in Fig. 1 30,31 and that of the h-LuFeO 3 film (2.0 eV) 25,32 . Time resolved diffractions were carried out on h-LuFeO 3 (106) peaks to measure the lattice constants and the structural distortions, using X-ray pulses (80 ps, 12 keV), at different time delay (Δ ) with respect to the laser pulses, with a two-dimensional detector.…”

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confidence: 99%

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Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

et al. 2017

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Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which have however been elusive due to the experimental difficulties. Employing the method of restrained thermal expansion, we have studied the effect of isothermal biaxial strain in the basal plane of h-LuFeO3 (001) films. The results indicate that a compressive biaxial strain significantly enhances the ferrodistortion, and the effect is larger at higher temperatures. The compressive biaxial strain and the enhanced ferrodistortion together, cause an increase in the electric polarization and a reduction in the canting of the weak ferromagnetic moments in h-LuFeO3, according to our first principle calculations. These findings are important for understanding the strain effect as well as the coupling between the lattice and the improper multiferroicity in h-LuFeO3. The experimental elucidation of the strain effect in h-LuFeO3 films also suggests that the restrained thermal expansion can be a viable method to unravel the strain effect in many other epitaxial thin film materials.

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confidence: 99%

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Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

et al. 2017

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“…The challenge that arises immediately —even upon cursory inspection of the dichroic spectra—is how to distinguish the different Fe contributions. One path forward is to employ the linear absorption spectrum, α ( E ), along with assignments from electronic structure calculations 20 – 22 , 27 , 31 , 32 to determine characteristic excitation energies of each type of iron center. Figure 2a displays the optical absorption spectrum of the (3, 1) superlattice.…”

Section: Resultsmentioning

confidence: 99%

“…The absolute absorption of (3, 1), (7, 1), and (9, 1) superlattices, as well as the end members were determined by subtracting the response of the substrate. Because the optical density of the films was optimized for magnetic circular dichroism spectroscopy rather than linear absorption, the excitations are not as pronounced as in prior work 27 , 32 . An open-flow cryostat provided temperature control (4.2–300 K).…”

Section: Methodsmentioning

confidence: 99%

Site-specific spectroscopic measurement of spin and charge in (LuFeO3)m/(LuFe2O4)1 multiferroic superlattices

et al. 2020

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Interface materials offer a means to achieve electrical control of ferrimagnetism at room temperature as was recently demonstrated in (LuFeO3)m/(LuFe2O4)1 superlattices. A challenge to understanding the inner workings of these complex magnetoelectric multiferroics is the multitude of distinct Fe centres and their associated environments. This is because macroscopic techniques characterize average responses rather than the role of individual iron centres. Here, we combine optical absorption, magnetic circular dichroism and first-principles calculations to uncover the origin of high-temperature magnetism in these superlattices and the charge-ordering pattern in the m = 3 member. In a significant conceptual advance, interface spectra establish how Lu-layer distortion selectively enhances the Fe2+ → Fe3+ charge-transfer contribution in the spin-up channel, strengthens the exchange interactions and increases the Curie temperature. Comparison of predicted and measured spectra also identifies a non-polar charge ordering arrangement in the LuFe2O4 layer. This site-specific spectroscopic approach opens the door to understanding engineered materials with multiple metal centres and strong entanglement.

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“…There is a significant lattice mismatch, however, which would lead to defect formation in the LuFeO 3 . The energy bandgap of LuFeO 3 is also rather small (∼1 eV) [38], which implies a low chance of the desired large band offset to the underlying SC channel, e.g., GaN or AlN; this band offset has not yet been measured. Nevertheless, the nitride SC platforms offer a choice of mature and tested heterostructure platforms such as Al(Ga)N/GaN heterostructures, in which the current blocking is achievable by the wider bandgap interlayer.…”

Section: B Multiferroic Lufeo 3 and Lufeo 3 /Lufe 2 O 4 Superlatticesmentioning

confidence: 99%

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

Dang¹,

Zhang²,

Casamento³

et al. 2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

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Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic (MF). This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to an SOTFET heterostructure.

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Direct band gaps in multiferroic h-LuFeO3

Cited by 42 publications

References 28 publications

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

Effects of biaxial strain on the improper multiferroicity inh−LuFeO3films studied using the restrained thermal expansion method

Site-specific spectroscopic measurement of spin and charge in (LuFeO3)m/(LuFe2O4)1 multiferroic superlattices

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

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