The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of "new" nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductorNbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.

Drug delivery to a specific site in the body typically relies on the use of targeting agents that recognize a unique biomarker. Unfortunately, it is often difficult to identify unique molecular signatures that exist only at the site of interest. An alternative strategy is to deliver energy (e.g. light) to locally trigger release from a drug carrier; however, the use of this approach is limited because energy delivery to deep tissues is often impractical or invasive. In this work, radiofrequency-responsive superparamagnetic iron oxide nanoparticles (SPIONs) are used to trigger drug release from nanoscale vesicles. Because the body is inherently non-magnetic, this approach allows for deep tissue targeting. To overcome the unfavorable meter-scale diffraction limit of SPION-compatible radiofrequency (RF) fields, a strong static gating field containing a sharp zero point is superimposed on the RF field. Only drug carriers that are at or near the zero point are susceptible to RF-triggered drug release, thereby localizing drug delivery with millimeter-scale resolution. This approach induces > 40% drug release from thermally-responsive doxorubicin-loaded liposomes within a 3.2 mm radius of the zero point with < 10% release in the surrounding area, leading to a > 2.5 therapeutic index in Huh 7 hepatocellular carcinoma cells.

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In this work, we studied the evolution and transport of the native oxides during the atomic layer deposition (ALD) of TiO2 on GaAs(100) from tetrakis dimethyl amino titanium and H2O. Arsenic oxide transport through the TiO2 film and removal during the ALD process was investigated using transmission Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Experiments were designed to decouple these processes by utilizing their temperature dependence. A 4 nm TiO2 layer was initially deposited on a native oxide surface at 100 °C. Ex situ XPS confirmed that this step disturbed the interface minimally. An additional 3 nm TiO2 film was subsequently deposited at 150 to 250 °C with and without an intermediate thermal treatment step at 250 °C. Arsenic and gallium oxide removal was confirmed during this second deposition, leading to the inevitable conclusion that these oxides traversed at least 4 nm of film so as to react with the precursor and its surface reaction/decomposition byproducts. XPS measurements confirmed the relocation of both arsenic and gallium oxides from the interface to the bulk of the TiO2 film under normal processing conditions. These results explain the continuous native oxide removal observed for alkyl-amine precursor-based ALD processes on III-V surfaces and provide further insight into the mechanisms of film growth.

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of providing large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin–orbit torque field-effect transistor, a device with the potential to significantly boost the energy efficiency of spin-based memories and to simultaneously offer a palette of functionalities.