Diode quality factor in polycrystalline solar cells

Abstract

The increase in diode quality factor with decreasing grain size in polycrystalline conductor (metal or degenerate semiconductor)-insulator-semiconductor (MIS) solar cells is explained as due to (1) an increase in insulator-semiconductor interface charge due to the presence of grain boundaries on the I-S surface, and (2) the voltage drop at the grain boundaries in the polycrystalline base semiconductor.

Calcium-doping effects on photovoltaic response and structure in multiferroic BiFeO3 ceramics

“…34 Sen and Tyagi predicted that n should depend on grain size. 36 For brevity, below, we introduce a "thermal voltage constant" V T , which has dimensions voltage and is proportional to T, given by V T nkT/q. Based on Eq.…”

Determination of a mathematical model of the thin-film photovoltaic panel (CIS) based on measurement data

“…The diode quality factor α increases also with increasing insulation layer thickness [5,13]. For Shell ST20 PV Copper Indium Diselenide (CIS) panel the diode quality factor α is typically in the range (1,2).…”

Raman Vibrations, Domain Structures, and Photovoltaic Effects in A‐Site La‐Modified BiFeO3Multiferroic Ceramics

“…with q = 1.6 × 10 −19 C, k B = 1.38 × 10 −23 J/K, and T = 300 K, we obtained i o = 5 × 10 −8 A, R s = 6.2 × 10 4 Ω, and ξ = 13 for BFO, i o = 5 × 10 −8 A, R s = 6.3 × 10 3 Ω, and ξ = 13 for BFO5L, i o = 5 × 10 −8 A, R s = 3.5 × 10 3 Ω, and ξ = 13 for BFO10L, and i o = 5 × 10 −8 A, R s = 1.26 × 10 4 Ω, and ξ = 13 for BFO15L. The quality factor ξ depends on grain size . From Eq.…”