Diode-pumped passively mode-locked Nd:GYSGG laser

Zhang, B.Y.; Xu, Jinlong; Wang, G.J.; He, Jingliang; Wang, W.J.; Zhang, Q.L.; Sun, Dunlu; Luo, Jianqiao; Yin, Shi

doi:10.1002/lapl.201110066

Cited by 26 publications

(20 citation statements)

References 24 publications

(35 reference statements)

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“…At the same time, the properties of the mode locked also have been reported in the crystal Nd:GYSGG [12,13].…”

Section: Introductionmentioning

confidence: 80%

“…The garnet family is an excellent example that classified as the so called "disordered multi center crystal." For the GGG crystal, the congruent melting composition is not stoichiometric, which should be expressed as {Gd 3 }[Gd 0.04 Ga 1.96 ](Ga 3 )O 12 [5,6]. Therefore, the Gd ions occupy the big dodecahedral site and middle size octahedral site at the same time.…”

Section: Introductionmentioning

confidence: 99%

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Diode pumped CW and passively Q-switched Nd:LGGG laser at 1062 nm

et al. 2012

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We report a Nd:LGGG laser at 1062 nm in the operations of the continuous wave (CW) and pas sively Q switching. The maximum CW output power of 5.62 W was obtained, corresponding to an optical to optical conversion efficiency of 49.0% and slope efficiency of 55.9%. By using Cr 4+ :YAG with initial trans mission of 94% as the saturable absorber, for the first time, we got the maximum passively Q switched output power of 1.21 W, accompanied with a highest pulse repetition rate of 27.1 kHz and a shortest pulse width of 9.1 ns.

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“…At the same time, the properties of the mode locked also have been reported in the crystal Nd:GYSGG [12,13].…”

Section: Introductionmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Diode pumped CW and passively Q-switched Nd:LGGG laser at 1062 nm

et al. 2012

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“…The mode‐lock laser performance of Nd:GYSGG with a single wavelength at 1061 nm has been demonstrated by B.Y. Zhang et al …”

Section: Introductionmentioning

confidence: 99%

Basic Properties of Nd‐Doped GYSGG Laser Crystal

Ding

Zhang

Luo

et al. 2017

Crystal Research and Technology

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In the present work, we investigated the mechanical properties (including hardness, fracture toughness, brittleness index and yield strength) of Nd 0.03 Gd 0.93 Y 2.04 Sc 2 Ga 3 O 12 (Nd:GYSGG) laser crystal using Vickers microhardness tester, for the first time. The defects morphology of Nd:GYSGG crystal were investigated by using chemical etching method with phosphoric acid etchant. The absorption spectrum of Nd:GYSGG from 300 to 2800 nm was measured at room temperature and the absorption peaks were assigned. The fluorescence lifetime of the 4 F 3/2 → 4 I 11/2 transition of Nd 3+ in GYSGG is fitted to be 221.3 μs. The three Judd-Ofelt intense parameters 2, 4, 6 were calculated to be 0.329 × 10 −20 cm 2 , 2.761 × 10 −20 cm 2 and 4.222 × 10 −20 cm 2 , respectively. All these demonstrate that Nd:GYSGG crystal is a good candidate laser material.

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“…Since then passive mode locking operation of different kinds of laser crystals were investigated with SESAM. The mode locked neodymium (Nd) doped lasers with SESAM attract more concern [2][3][4][5][6][7], because the stronger absorption central wavelength of the Nd doped crystals [8][9][10][11] is 808 nm which is easy obtained by diode laser. Gado linium gallium garnet (GGG), another crystal suitable for Nd 3+ doping was first grown by Gcusic et al using the Czochralski method in 1964 [12].…”

Section: Introductionmentioning

confidence: 99%