Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

Tan, Siew Li; Soong, W. M.; Steer, Matthew J.; Zhang, Shiyong; Ng, Jo Shien; David, J.P.R.

doi:10.1117/12.910349

Cited by 8 publications

(3 citation statements)

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“…In the context of solar cells, using Sb in either GaAsSbN or InGaAsSbN alloys tends to yield better carrier collection properties [9,10]. However, there have been only few reports about the effects of adding Sb in thick InGaAsN layers that are needed for highly efficient solar cells, mostly limited to layers of 1-1.5 m thickness [11,12]. Similarly to InGaAsN, the InGaAsSbN material has an anomalous band structure due to N-related defects.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Milanova

Asenova

Shtinkov

et al. 2018

Journal of Crystal Growth

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Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsNSb layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.

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Section: Introductionmentioning

confidence: 99%

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Milanova

Asenova

Shtinkov

et al. 2018

Journal of Crystal Growth

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“…While the result cannot be directly compared with the dark IV due to the absence of the Ge and GaInNAs subcells, the difference between both is within a sensible range, 0.523 V at 1 Sun. This has to be split between the Ge junction -with typical V oc at 1 Sun of 0.2-0.25 V [9], [12]-and the dilute nitride junction -with reported voltages in the 0.2-0.4 V range for a 1 eV subcell [18], [19]. …”

Section: J Solar Cellmentioning

confidence: 99%

Photoluminescence-Based Current–Voltage Characterization of Individual Subcells in Multijunction Devices

Alonso‐Álvarez

Ekins-Daukes

2016

IEEE J. Photovoltaics

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-We demonstrate a photoluminescence based, contactless method to determine the current-voltage characteristics of the individual subcells in a multi-junction solar cell. The method relies upon the reciprocity relation between the absorption and emission properties on a solar cell. Laser light with a suitable energy is used to excite carriers selectively in one junction and the internal voltages are deduced from the intensity of the resulting luminescence. The IV curves obtained this way on 1J, 2J and 6J devices are compared to those obtained using electroluminescence. Good agreement is obtained at high injection conditions while discrepancies at low injection are attributed to in-plane carrier transport.

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“…Dilute Nitrides are frequently proposed as the material to enable the requisite ~1.0 eV sub-cell in a 4-junction GaInP/(Al)GaAs/InGaAsN/Ge solar cell [1]. With such a choice, it is very challenging to achieve the required shortcircuit current density ‫ܬ(‬ ௌ ) from a InGaAsN sub-cell since its diffusion lengths are short [2].…”

Section: Introductionmentioning

confidence: 99%

Effects of luminescent coupling in single- and 4-junction dilute nitride solar cells

Wilkins

Gabr

Trojnar

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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A novel method for incorporating the effects of luminescent coupling and photon recycling in numerical simulations of planar devices is described.The carrier generation is incorporated directly in the device simulator as an additional term in the continuity equation, so that no additional iterations are required. The method is applied to single-and four-junction solar cells containing ~1.0 eV dilute nitride material. We find that luminescent coupling increases the shortcircuit current ሺ ሻ of the 1-junction dilute nitride cell by 2.4% due to coupling with the Al 0.05 Ga 0.95 As filter. In the 4-junction design, there is significant photon recycling within the GaAs and GaInP sub-cells, providing a 60 mV increase in open-circuit voltage. There is a 1.9% relative increase in calculated efficiency to 44.4%.

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Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

Cited by 8 publications

References 0 publications

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Photoluminescence-Based Current–Voltage Characterization of Individual Subcells in Multijunction Devices

Effects of luminescent coupling in single- and 4-junction dilute nitride solar cells

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