Abstract:Silicon-germanium (SiGe) has been considered as an important alternative material to silicon due to its high carrier mobility, low power consumption and excellent performance [1]. However, due to both material unique phase diagram with melting points separated by 376 °C, it is too difficult to realize a good bulk quality of polycrystalline-free SiGe single crystals with controlled Ge contents.
In this work, crystalline thick epitaxial layers of SiGe with Ge contents exceeding 30% are fabricated … Show more
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