Digital alloy growth in mixed As/Sb heterostructures

Kaspi, R.; Donati, Giovanni

doi:10.1016/s0022-0248(02)02185-1

Cited by 38 publications

(17 citation statements)

References 11 publications

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“…Digital alloying in MBE growth has been well documented for various III-As, III-Sb, and recently III-N heterostructures. [3][4][5][6][7][8][9][10][11] However, to our knowledge, no work has been reported to date on the growth and properties of digital alloying in the technologically important AlGaInP material system grown by MBE. This paper explores the growth and properties of lattice-matched (to GaAs) digitally-alloyed AlGaInP quaternaries grown by MBE, which is potentially important in designing advanced III-P heterostructure optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy

Kwon

Lin

Boeckl

et al. 2005

Journal of Elec Materi

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Digital alloying using molecular beam epitaxy (MBE) was investigated to produce AlGaInP quaternary alloys for bandgap engineering useful in 600-nm band optoelectronic device applications. Alternating Ga 0.51 In 0.49 P/Al 0.51 In 0.49 P periodic layers ranging from 4.4 monolayers (ML) to 22.4 ML were used to generate 4,000-Å-thick (Al 0.5 Ga 0.5 ) 0.51 In 0.49 P quaternary materials to understand material properties as a function of constituent superlattice layer thickness. High-resolution x-ray diffraction (XRD) analysis exhibited fine satellite peaks for all the samples confirming that digitally-alloyed (Al 0.5 Ga 0.5 ) 0.51 In 0.49 P preserved high structural quality consistent with cross-sectional transmission electron microscopy (X-TEM) images. Low-temperature photoluminescence (PL) measurements showing a wide span of luminescence energies ϳ170 meV can be obtained from a set of identical composition digitally-alloyed (Al 0.5 Ga 0.5 ) 0.51 In 0.49 P with different superlattice periods, indicating the bandgap tunability of this approach and its viability for III-P optoelectronic devices grown by MBE.

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Section: Introductionmentioning

confidence: 99%

Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy

Kwon

Lin

Boeckl

et al. 2005

Journal of Elec Materi

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“…Improvements in composition control and crystalline quality of AlAs x Sb 1Àx and In(Ga)As x Sb 1Àx alloys grown by modulated MBE have been reported. 11,[19][20][21][22][23] Further advantages of modulated MBE are that the technique could provide protection against composition drift and achieve more abrupt interfaces, 23 which are important factors to take into consideration since the transition wavelength and recombination efficiency are expected to be strongly influenced by the compositional abruptness at the interfaces. 24 …”

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confidence: 99%

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang¹,

Steenbergen²,

Zhang³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Strain-balanced InAs/InAs1−xSbx type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs1−xSbx SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs1−xSbx alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs1−xSbx layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs1−xSbx deposited on InAs were more abrupt, relative to InAs deposited on InAs1−xSbx: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

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“…The reduction in dependence on both of these parameters has been demonstrated in the literature [11]. For the Ga-free SL, this would mean a marked improvement in growth stability and repeatability, which is highly desirable for both research and production purposes.…”

Section: Introductionmentioning

confidence: 82%