Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

“…However, the estimated value of D is about eight orders of magnitude higher than the extrapolated diffusion coeffi cient of Cu ions, which was evaluated by secondary ion mass spectroscopy for a 120 nm thick Ta 2 O 5 fi lm deposited by pulsed laser deposition on Cu. [ 23 ] The enhanced diffusion coeffi cient may come from the downscaling of the fi lm thickness as well as the structural difference of the deposited Ta 2 O 5 fi lm. Figure 4 d also suggests that Ag ions can diffuse faster than Cu ions at the same sweep rate.…”

Filament formation and erasure in molybdenum oxide during resistive switching cycles

“…The current-voltage (I-V) curve exhibits hysteresis that can be exploited in nonvolatile ReRAMs. Since an early report of a Perovskite-type oxide, 7 various materials including binary oxides [8][9][10][11][12][13] and solid electrolytes [14][15][16][17][18][19][20][21][22][23][24] have been reported on this switching operation. The pristine state is typically HRS.…”

“…Its operation is expected as follows. 2,5,19,22,23 Positive voltage to the TE oxidizes Cu into cations. The Cu ions move along the electric field toward the BE, are metallized there, and grow toward the TE.…”

“…The filament destruction observed here does not fit with reported models. 19,22,23 As described above, the TiN surface was oxidized. This region must have higher resistance than the other region in the filament, and the generated Joule heat is concentrated here.…”

Non-Volatile Resistive Switching in Graphene Oxide Thin Films

“…Herein, the effect of top electrode materials on the Forming process in GO thin films is investigated. (Banno et al, 2008). Therefore, we can infer that a large ion diffusion coefficient can lead to a large ion flux and thus a low switching voltage.…”