Diffusion profiles of zinc in indium phosphide

Abstract

A series of experiments is described in which radio-tracer Zn was diffused into n-type InP over a wide range of experimental conditions. Diffusions were carried out in the temperature range 650-900 "C, for varying times of diffusion, and for a varicty of ambient vapour pressures. Both chemical and isoconcentration diffusions were performed, and it was found that the diffusion constants for chemical diffusion are much smaller than those for isoconcentration experiments. A detailed consideration of the shapes of the profiles shows that a time-dependent process occurs in the diffusion, giving rise to a concave section in some of the profiles. A model is proposed in which most of the Zn occurs in the InP in the form of the complex ( VpZnInVp). Zn atoms also occupy In sites, giving rise to the observed p-type conductivity and, in addition, exist in a fastdiffusing interstitial state. It is shown that the results of this and of previous work are in good qualitative agreement with the model.

Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy

“…Although the p r e g r o w t h duration in which ramp cooling took place ranged from 10 to 30 min, we have used 20 min as the median value in the calculation. The values of Dzn are obtained to be 3.5 • 1.0 X 10 -1~ cm 2 sec -1 for the diffusion from the vapor in the temperature range of 620~176 and 1.0 _ 0.3 X 10 -l~ cm 2 sec -1 for the diffusion from the liquid in the t e m p e r a t u r e range of 620~176 Taking into account the Zn evaporation continuously occurring during the growth and also the appreciable variation of the initial Zn fraction in the melt, these values are considered to be in a reasonable agreement with earlier works (10,11).…”

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

“…Conibeer et al [9] found that adding Sb to Zn source can shorten the p-n junction depth by decreasing the diffusivity because that Zn diffusivity is inversely proportional to the Sb vapor pressure. Similar results have been reported in GaAs [19], GaP [18], and InP [20,21]. In addition to Zn and Zn-Sb sources, Zn-Ga was often used as a diffusion source [8,12].…”

Numerical analysis of multiplication layer for InGaAs/InP single photon avalanche diodes

“…The multiplication layer is intrinsic in theory, but the Zn concentration of the p+InP layer is an error function distribution in the thermal diffusion process [7],which is equivalent to changing the dopant concentration of the multiplication layer,or even introducing traps to the interface between multiplication layer and p+InP layer. We change the doping concentration of multiplication layer from 1E15 cm -3 to 4E16 , as seen in Fig.…”