Diffusion of zinc into gaas layers grown by molecular beam epitaxy at low substrate temperatures

Sin, Y. K.; Zhang, Y.; Kolbas, R. M.

doi:10.1007/bf02657827

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…Also, it has been demonstrated that Zn diffusion is strongly enhanced in LTMBE GaAs (Sin, et al 1991). Again this result can be understood in terms of VGa facilitated diffusion of Zn atoms residing on the Ga sites.…”

Section: )mentioning

confidence: 87%

Defect studies in low-temperature-grown GaAs

Bliss¹

1992

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Section: )mentioning

confidence: 87%

Defect studies in low-temperature-grown GaAs

Bliss¹

1992

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High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

et al. 1992

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Annealing studies of low-temperature-grown GaAs:Be

Bliss

Walukiewicz

Ager

et al. 1992

Journal of Applied Physics

110

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An approximate continuum theory for interaction between dislocation and inhomogeneity of any shape and properties J. Appl. Phys. 109, 113529 (2011) Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon J. Appl. Phys. 109, 073521 (2011) Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities J. Appl. Phys. 109, 033504 (2011) Low-temperature acoustic properties of nanostructured zirconium obtained by intensive plastic deformation Low Temp.The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 "C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from lOi to 1019 cm -3. Electrical measurements of as-grown material up to the highest Be concentration of lOI cm -3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of Aso,-related native donor defects present in LTMBE material. The concentration of Aso,-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3 X 1019 cm -3. A distinct annealing stage at 5OO.Y!, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of As o,-related defects. A second annealing stage near 800 "C corresponds to the activation of Be acceptors. The presence of gallium vacancies V,, was investigated by slow positron annihilation. Results indicate an excess concentration of Voa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of Aso=-related defects gives an activation energy of 1.7 kO.3 eV. The defect removal mechanism is modeled with VG,-assisted diffusion of AsGa to As precipitates.

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Diffusion of zinc into gaas layers grown by molecular beam epitaxy at low substrate temperatures

Cited by 5 publications

References 23 publications

Defect studies in low-temperature-grown GaAs

Defect studies in low-temperature-grown GaAs

High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

Annealing studies of low-temperature-grown GaAs:Be

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