1981
DOI: 10.1063/1.329340
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Diffusion of zinc in gallium arsenide: A new model

Abstract: Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank–Turnbull mechanism involving vacancies can be understood with a ’’kick-out model’’ in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.

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Cited by 253 publications
(79 citation statements)
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“…Hierbei ist anzumerken, dass die Oktaederlücken für Cadmiumionen im ZnSe-Gitter das bessere Platzangebot darstellen. Die auf den Zwischengitterplätzen beweglichen Cadmiumionen kçnnen dann über einen "Kick-out"-Mechanismus [25,26] Zinkionen von ihren Gitterplatz verdrängen, wobei die Zinkionen über Zwischengitterplätze den Nanokristall verlassen. Die Mischkristallbildung erfordert eine statistische Verteilung der Cadmiumionen im ZnSe-Gitter, bevor der eigentliche Austausch erfolgt.…”
Section: Angewandte Chemieunclassified
“…Hierbei ist anzumerken, dass die Oktaederlücken für Cadmiumionen im ZnSe-Gitter das bessere Platzangebot darstellen. Die auf den Zwischengitterplätzen beweglichen Cadmiumionen kçnnen dann über einen "Kick-out"-Mechanismus [25,26] Zinkionen von ihren Gitterplatz verdrängen, wobei die Zinkionen über Zwischengitterplätze den Nanokristall verlassen. Die Mischkristallbildung erfordert eine statistische Verteilung der Cadmiumionen im ZnSe-Gitter, bevor der eigentliche Austausch erfolgt.…”
Section: Angewandte Chemieunclassified
“…[25,26] Zinc ions,n ow occupying interstitials,w ill then leave the crystal by diffusion through interstitials.The formation of the homogeneous alloy requires an equal distribution of cadmium ions in the ZnSe lattice before the real exchange occurs.T hus,t he rate determining step is not diffusion, but the ion exchange.T he estimated activation energy is the one of the cation exchange.T he fact that this value is rather small can only be explained with akick-out mechanism without vacancy creation. [23,25,26] In this process,the developing vacancy is filled by the exchanging ion in ac ooperative process,w hich lowers the activation energy of this exergonic process significantly compared to typical vacancy creation.…”
mentioning
confidence: 99%
“…The diffusion of Zn in III-V compound semiconductors takes place by both substitutionalinterstitial [15][16][17] and kick-out mechanisms. [ 18,19 ] The diffusion coeffi cient of Zn is related to the formation energy of group III vacancies in case of the kick-out mechanism and to wider band gap materials with higher bond gap energy, [ 20 ] which show low diffusion coeffi cients of Zn, in case of the substitutional mechanism. Therefore, the diffusion coeffi cient of Zn in GaInP is lower than that in GaAs, [ 19 ] suggesting that the GaInP window layer might prevent the diffusion of Zn from a highly Zn doped p-type contact layer.…”
Section: Doi: 101002/aenm201400589mentioning
confidence: 99%