Diffusion of photogenerated acid in chemical amplification positive deep UV resists.

Schlegel, Leo; Ueno, Takashi; Hayashi, Nobuaki; Shiraishi, Hiroshi; Iwayanagi, Takao

doi:10.2494/photopolymer.4.455

Cited by 24 publications

(27 citation statements)

References 6 publications

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“…One study showed that significantly different image profiles were obtained depending on the casting solvent [10]. More direct evidence of residual solvent effects on diffusion has been reported by workers from Hitachi [11]. Their work demonstrated that the diffusion range of acid in resist films changes sharply with the level of retained casting solvent.…”

Section: Compositional Effects On Nmp Absorption a Effect Of Photoacmentioning

confidence: 87%

Fundamental Studies of airborne chemical contamination of chemically amplified resists.

Hinsberg

Macdonald

Clecak

et al. 1993

J. Photopol. Sci. Technol.

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The susceptibility of most chemically amplified resists to performance degradation caused by low levels of airborne basic chemical substances presents a significant barrier to their practical implementation.We have carried out a series of systematic studies intended to improve our understanding of the mechanism of such degradation.We summarize here our investigation of how the contaminant resist interaction is influenced by resist film composition.Our results suggest that contamination effects can be minimized y targeting specific ranges of physical properties when designing the matrix polymer.

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Section: Compositional Effects On Nmp Absorption a Effect Of Photoacmentioning

confidence: 87%

Fundamental Studies of airborne chemical contamination of chemically amplified resists.

Hinsberg

Macdonald

Clecak

et al. 1993

J. Photopol. Sci. Technol.

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“…The higher the TG of the polymer the higher the solvent content. [29] At the beginning of the baking process at TPB, the polymer is in the relaxed state due to the high solvent content. During the bake, the solvent content decreases, and at some critical concentration the film transits into the glassy state.…”

Section: Photometric Methodsmentioning

confidence: 99%

Novel Diffusion Analysis in Advanced Chemically Amplified DUV Resists Using Photometric Methods.

Richter

Hien

Sebald

1999

J. Photopol. Sci. Technol.

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The demand for smaller device dimensions in microlithography drives the need to understand and control diffusion during photoresist processing. In advanced chemically amplified systems the lithographic performance is strongly influenced by diffusion of acid and base additives. Photoacid generation efficiencies and diffusion parameters were quantitatively evaluated using an established in situ photometric method employing a pH-sensitive organic dye. [ 1-3 ] A kinetic model for the post-exposure bake (PEB) has been proposed, transferred to molecular reaction dynamics and extanded to transport properties. The experimental data for this model have been obtained from UV/VIS spectroscopy measurements. The UV/VIS data show that a photoacid loss reaction during post-exposure bake has to be taken into account. Rough estimations of the acid diffusion lengths are given by the rate of the diffusion-controlled neutralization reaction for blanket exposures. The acid diffusion range was minimized, as the temperature of pre baking was raised and the PEB temperature was reduced. Chemical kinetics around the glass transition temperature of the resist are discussed. Furthermore, a face-to-face contact experiment (wafer-sandwich) involving the dye was used to determine acid loss during PEB. Comprehensively, the acid diffusion within the matrix and acid evaporation out of the matrix could be quantified. Results are used to improve the lithographic performance of the dual-wavelength CARL® [4,5] resist system presently used at Infineon Technologies.

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“…Studies have been performed with the goal of understanding the acid diffusion within films of photoresists during PEB. Most experimental techniques involve optical spectroscopy and fluorescence microscopy, but other techniques were employed as well [29][30][31][32].…”

Section: Acid Detection Quantification and Catalytic Chain Lengthmentioning

confidence: 99%

Photoimaging and Lithographic Processes in Polymers

Ivan

Scaiano

2010

Photochemistry and Photophysics of Polymer Materials

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Diffusion of photogenerated acid in chemical amplification positive deep UV resists.

Cited by 24 publications

References 6 publications

Fundamental Studies of airborne chemical contamination of chemically amplified resists.

Fundamental Studies of airborne chemical contamination of chemically amplified resists.

Novel Diffusion Analysis in Advanced Chemically Amplified DUV Resists Using Photometric Methods.

Photoimaging and Lithographic Processes in Polymers

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