Diffusion of oxygen in silicon

Watkins, G. D.; Corbett, J. W.; McDonald, Robert

doi:10.1063/1.330017

Cited by 61 publications

(10 citation statements)

References 3 publications

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“…14,15,21 These studies proposed that an O atom jumps from one bridging site to another along a path in the ͑110͒ plane with a computed activation energy in agreement with experimentally measured values (2.53-2.56 eV). 22,23 Our recent calculation with a cluster mimicking the inside of a Si crystal is also in good agreement with these previous studies with an activation-energy barrier calculated to be 2.7 eV. 24 According to the present calculations, inward oxygen diffusion at a nonterminated Si surface has a lower activation energy than that for the inside of a Si crystal.…”

Section: Discussionsupporting

confidence: 90%

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Hoshino

Nishioka

2001

Phys. Rev. B

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Generation of an electrochemical proton gradient is the first step of cell bioenergetics. In prokaryotes, the gradient is created by outward membrane protein proton pumps. Inward plasma membrane native proton pumps are yet unknown. We describe comprehensive functional studies of the representatives of the yet noncharac-terized xenorhodopsins from Nanohaloarchaea family of microbial rhodopsins. They are inward proton pumps as we demonstrate in model membrane systems, Escherichia coli cells, human embryonic kidney cells, neuro-blastoma cells, and rat hippocampal neuronal cells. We also solved the structure of a xenorhodopsin from the nanohalosarchaeon Nanosalina (NsXeR) and suggest a mechanism of inward proton pumping. We demonstrate that the NsXeR is a powerful pump, which is able to elicit action potentials in rat hippocampal neuronal cells up to their maximal intrinsic firing frequency. Hence, inwardly directed proton pumps are suitable for light-induced remote control of neurons, and they are an alternative to the well-known cation-selective channelrhodopsins.

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Section: Discussionsupporting

confidence: 90%

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Hoshino

Nishioka

2001

Phys. Rev. B

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“…From the radius of the depletion zone the diffusion coefficient is estimated as 1.3 • 10 -13 cm2/s, where the time used was the 960 min du-9 ration of step 2. According to Watkins et al (18), the diffusion coefficients of oxygen in silicon at 700 ~ and 1200~ are 1.3 • 10 -14 and 4 • 10 -I~ cm2/s, respectively. This means that precipitate coalescence and dissolution took place to provide the oxygen which allowed the coalesced precipitates to grow.…”

Section: Results and Disucssionmentioning

confidence: 99%

A Transmission Electron Microscopy (TEM) Study of Oxygen Precipitation Induced by Internal Gettering in Low and High Oxygen Wafers

Rivaud

Anagnostopoulos

Erikson

1988

J. Electrochem. Soc.

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A B S T R A C T Czochralski silicon wafers with h i g h (34-40 p p m ) a n d low (22-28 p p m ) o x y g e n c o n t e n t were u s e d to c o m p a r e t h e precipitation characteristics of b o t h types of wafers s u b j e c t e d to a four-step getter a n n e a l procedure. T E M o b s e r v a t i o n s from t h e b u l k of t h e wafers t h a t received t h e full s i m u l a t e d t h e r m a l t r e a t m e n t revealed a precipitation r e g i m e t h a t b e g a n w i t h t h e n u c l e a t i o n of n e e d l e -s h a p e d f u n d a m e n t a l precipitates a n d evolved by c o a l e s c e n c e a n d defect colony g e n e r a t i o n into t h e f o r m a t i o n of o c t a h e d r a l precipitates. O x y g e n in CZ silicon wafers is i n c o r p o r a t e d from t h e silica crucible d u r i n g t h e g r o w t h of t h e crystal from the melt. This u n i n t e n d e d i m p u r i t y c a n be m a d e to h a v e a beneficial effect in device fabrication if t h e wafers are s u b j e c t e d to in situ gettering (1) or intrinsic gettering (2). A c c o r d i n g to t h e m e c h a n i s m outlined by T a n et al.(2), d u r i n g intrinsic g e t t e r i n g o x y g e n diffuses out of the surface of t h e wafer b u t precipitates in the bulk; o x y g e n precipitation in t h e b u l k generates defect centers t h a t act as low e n e r g y sites for h e a v y metallic i m p u r i t i e s such as Ni a n d Fe (3, 4). In addition, o x y g e n precipitates s o m e t i m e s p u n c h o u t dislocation loops (2) w h i c h p r o v i d e additional sites for m e t a l a t o m s (5). These i m p u r i t i e s are p r e v e n t e d from diffusing to t h e surface of t h e wafer a n d f o r m i n g electrically active c e n t e r s d e t r i m e n t a l to device p e r f o r m a n c e . O x y g e n precipitation, therefore, plays a direct role in t h e g e t t e r i n g of CZ silicon. T h u s it is i m p o r t a n t to u n d e r s t a n d its d y n a m i c s to optimize t h e intrinsic gettering effect. One t e c h n i q u e particularly suited to s t u d y p r e c i p i t a t i o n is t r a n s m i s s i o n electron m i c r o s c o p y (TEM), owing to its h i g h r e s o l u t i o n in i m a g i n g precipitates a n d t h e i n f o r m a t i o n it gives on t h e crystallographic n a t u r e of associated defects.We u s e d wafers with two different o x y g e n contents. One set of wafers h a d h i g h (34-40 p p m ) a n d a n o t h e r set low (22-28 ppm) o x y g e n content. High o x y g e n wafers are exp e c t e d to s h o w a larger v o l u m e of o x y g e n precipitation. L o w o x y g e n wafers, on t h e other hand, are preferred for s o m e device fabrication because, as we h a v e r e p o r t e d previously (6), t h e surface defect density of finished devices u s i n g low o x y g e n wafers is lower t h a n in h i g h o x y g e n wafers.A gettering p r o c e d u r e we h a v e d e s c r i b e d previously (6) ( s h o w n in Fig. 1) was used in this study. T h e evolution of t h e precipitates with thi...

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“…The model space is a cubic lattice with the lattice spacing a = 0.01 um. The time step At is equal to a 2 /(6D) with D the diffusion coefficient for oxygen in silicon [11]. The thermal anneal is 100 hours at 750 t. The number of oxygen or solute atoms in the model space, 8000, is the volume times the initial oxygen concentration of 1.0x101 8 /cm 3 .…”

Section: Methodsmentioning

confidence: 99%

Numerical Studies of Precipitate Coarsening Phenomena

Lavine

Hawkins

1990

MRS Proc.

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A three-dimensional Monte Carlo computer program is used to study the time-dependent coarsening of a precipitate population in a solid. The emphasis is on the influence of the escape rate of solute atoms from a precipitate on the coarsening behavior. Three models for the escape attempt frequency are compared. The time when coarsening is observed and the extent of coarsening depend on the model as does the percentage of solute precipitated in a given time. The qualitative results of the present calculations are compared with earlier findings.

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Diffusion of oxygen in silicon

Cited by 61 publications

References 3 publications

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

Mechanism of inward oxygen diffusion on H-, OH-, and nonterminated silicon surfaces

A Transmission Electron Microscopy (TEM) Study of Oxygen Precipitation Induced by Internal Gettering in Low and High Oxygen Wafers

Numerical Studies of Precipitate Coarsening Phenomena

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