Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration

Faccinelli, Martin; Kirnstoetter, Stefan; Jelinek, Moriz; Wuebben, Thomas; Laven, Johannes G.; Schulze, Hans‐Joachim; Hadley, P.

doi:10.48550/arxiv.1611.04312

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“…Concerning the migration of hydrogen in ion implanted Si the reported diffusion constants vary over six orders of magnitude [24]. This wide spread of data is caused by the different concentrations of defects in the studied samples.…”

Section: Results Of Pmr Measurementsmentioning

confidence: 93%

“…Hydrogen diffusion is slowed down as it interacts with impurities. In a comprehensive work, for RT an effective diffusion coefficient of ∼10 -12 cm 2 s -1 -although with orders of magnitude uncertainty -for hydrogen has been extrapolated based on a wide range of accessible data measured at elevated temperatures [24]. This means that in our experiments the migration of hydrogen on a longer time scale cannot be excluded, however, vacancies seems to be more mobile, as for H a diffusion length of (D H t) 1/2 ∼2.9 µm can be estimated for t = 24 hours duration.…”

Section: Results Of Pmr Measurementsmentioning

confidence: 99%

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Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements

Szívós

Balogh

Rajta

et al. 2022

IEEE J. Electron Devices Soc.

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High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring the accumulation kinetics and stability of proton-implantation induced defects and their influence on the optical and electrical properties of Si achieved increased attention both in technological process control and scientific research. We show that photo-modulated-reflectance (PMR) is effective technique to measure very low defect concentrations in the ppb-ppm range in high energy proton implanted silicon. After ion irradiation, the as-implanted dilute damage structure may lead to long term changes of the defect distribution and the formation of defect compounds due to mobility of point defects at room temperature. Moreover, low-mass hydrogen atoms may move significantly faster at room temperature compared to heavier dopants. We show that PMR is capable to detect differences in implanted proton dose with high sensitivity in a wide dose range, and, on a longer time scale, allows to follow changes in free carrier generation and recombination processes through the measurement of the long term decay of the PMR signal which is related to the sample response based on electrooptic and thermo-optic effects. Our experiments may pave the way toward high precision process control of device structure fabrication which utilizes the high-energy hydrogen implantation step. Also, our aim is to gain insight into the main processes underlying the dose dependent change and long-term decay of the PMR signal in high energy proton implanted Si.

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Section: Results Of Pmr Measurementsmentioning

confidence: 93%

Section: Results Of Pmr Measurementsmentioning

confidence: 99%