Diffusion of gold and silver in amorphous As2Se3

Abstract

Using Au 198 und Ag 110m as tracers the diffusion of gold and silver is measured in bulk samples of glassy As2Se3. In doped arsenic selenide the temperature dependence of the diffusion coefficient D obeys the following Arrhenius equations: DAg = 3 exp (−0.89 eV/kT) cm2/s; DAu = 6 exp (−1.15 eV/kT) cm2/s. Doping with Ge remains DAu and DAg unchanged, Cu doping markedly decreases the diffusion. The results are discussed with respect to the diffusion mechanism.

Determination of the charge of migrating impurities from electrodiffusion profiles: The system a-As2Se3:Cu

“…I n contrast to the usual situation the profile of the doped sample has a slight asymmetry with the lower D on the back side. This is plausible because a slight decrease of D a t Cu doping was already observed in the case of Ag and Au diffusion in a-As,Se3 [15].…”

“…Concerning the Cu diffusion behaviour the measured overall erfc (5) or exp (-x2) concentration distributions suggestedsimilar as in the cases of the systems a-As,Se,:Ag;Au [15], but unlike a-As,&: Ag [19]the model of a uniform migration process, probably an interstitial-like mechanism. The main argument follows from the smallness of the pre-exponential factor in (4) (Do = 5 x cmz/s) ( cf.…”

Photostimulated Diffusion in Semiconductors

“…The temperature dependences of the diffusion coefficients of silver (at 110 to 160 "C) [47] and gold (at 130 to 172 "C) [48, 491 in As,Xe, are, respectively, described by The investigations on thermal diffusion of silver ( T = 80 to 210 "C) and gold (T = 150 to 210 "C) in As,Se, made in [50] under boundary conditions corresponding to the diffusion from an infinitely thin layer, give the following temperature dependences for the diffusion coefficients (see Fig. 15) :…”

“…The differences in the diffusion activation energies for silver and gold reported in [47 to 501 are likely to be due to various prehistories of these glasses. It should he emphasized that the softening temperature of As,Se, is known to amount to T, = F=: 174 "C. I n this respect glass softening may have an effect upon the diffusion measurements at T > T,, undertaken in [50].…”

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

“…In contrast, for oxide-based ECM cells, resistive switching with Sn [26], Co [27], Ni, V, Fe and even Au [28] as active electrodes has been observed and can lead to altered stabilities, resistances and SET/RESET characteristics. However, chalcogenide materials provide a different chemical environment compared to oxides and a possible dissolution of the active electrode has to be taken into account [29][30][31][32]. Therefore, the formed metal/solid electrolyte interfaces differ from oxides, which should affect device performances and reliability.…”