Diffusion of europium in silicon

Nazyrov, D. É.

doi:10.1134/1.1575359

Cited by 3 publications

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“…A comparison of our data on the Sc and Pr diffusion in silicon with the earlier data on the diffusion of other rare earth elements in silicon obtained by the radioactive-tracer and other techniques [3,4,[6][7][8] shows that the diffusion parameters of rare earth elements in silicon are practically independent of the method the diffusate is deposited by and of the diffusion medium.…”

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confidence: 58%

Diffusion, solubility, and electrical properties of scandium and praseodymium in silicon

Zainabidinov

Nazyrov

2007

Russ Phys J

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An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in various media and temperature ranges (1100-1280°С) was performed for the first time. The tracer technique, autoradiography, measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations. The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined.Recently silicon doped with rare earth elements (REE) has attracted increasing attention of researchers as a candidate material for optoelectronics. This is due both to the fact that the Si structures hold much promise in silicon optoelectronics as light sources (for example, for Si, the wavelength 1.54 µm means the minimal loss and dispersion in the optical-fiber communication lines) and to the special features of electron shells of the elements of this group [1,2]. The efficiency of rare earth impurities in silicon and manifestation of optical properties of the structures depend on the spectrum of electrically and optically active centers containing REEs, as well as on the total concentration and REE diffusion mechanism.The aim of the work was an integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon.A metal layer of the radioactive isotope 46 Sc was deposited, or a scandium chloride layer labelled by the radioactive isotope 46 Sc and a praseodymium chloride layer containing an oxide of the radioactive isotope 143 Pr 2 O 3 were put from solution onto the surfaces of silicon samples of the n-type with the specific resistance ρ = 15-100 Ω·cm. The area and thickness of the samples were ∼1.5-2.5 cm 2 and ∼350-380 µm, respectively.To study electrical properties, the stable isotopes of scandium and praseodymium metals or three-valence salts of scandium and praseodymium chlorides were used as diffusates. Diffusion annealing was performed at 1100-1280°С in the vacuum ampoules (~10 -5 -10 -7 mmHg) in the air or in the evacuated ampoules in the argon atmosphere. The diffusion annealing time was varied in the interval from 5 to 72 hours depending on the diffusion temperatures.After diffusion annealing, the samples were rinsed many times in the hydrofluoric acid, chloroazotic acid, and boiling H 2 O 2 :HCl solution. Then, a layer (~ 100 µm) much thicker than the diffusion depth (~10 µm) was removed from the sample edges.The profiles of diffusates were determined by the sectioning method -etching of thin layers (in the solution HF:HNO 3 = 1:50 followed by washing in the H 2 O 2 :HCl mixture) and measuring the residual activity of the samples using a low background noise UMF-1500М facility with a β-counter SBT-11. The 46 Sc and 143 Pr spectra were identified by measurements performed using a pulse analyzer AI-1024 (A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, St. Petersburg). The thickness of etched layers (0.05-0.5 µm) was determined...

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confidence: 58%

Diffusion, solubility, and electrical properties of scandium and praseodymium in silicon

Zainabidinov

Nazyrov

2007

Russ Phys J

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“…The depletion width at zero bias is ≈2 µm. The diffusion length of the REs for the maximum anneal temperature and time used here (850 °C/5 min) is ≈0.02 µm, [ 58 ] which is much less than the depletion width. Device Characterization : EL and PL were measured between 20 K and room temperature from 1000 to 2200 nm using an InGaAs detector.…”

Section: Methodsmentioning

confidence: 89%

Section: Methodsmentioning

confidence: 89%

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

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1986 wileyonlinelibrary.com devices using alternative direct band gap semiconductors. This hybridization is highly undesirable, seriously violating the paramount technological and cost advantages inherent in silicon integration that has driven its exponential growth. The ultimate vision of silicon integration is a totally single silicon solution incorporating both electronic and photonic functions. Here we report a novel phenomenon-siliconmodifi ed rare-earth (RE) transitions-and demonstrate light emitting diodes (LEDs) and mid-IR photodetectors. Universally, luminescence from RE-doped semiconductors has shown only the expected characteristic intrinsic transitions; consequently emission from REs with transitions greater than the semiconductor band gap energy should not occur. Europium, ytterbium, and cerium have their lowest energy transitions well above the band gap energy of silicon. Remarkably, we see photoluminescence (PL) and electroluminescence (EL) due to Eu, Yb, and Ce in silicon but dramatically redshifted in wavelength and strikingly enhanced in intensity by up to 900 times compared with conventional RE-doped silicon LEDs. These results refute previous thinking on the interaction of REs with semiconductors and offer a promising route to effi cient, fully silicon-based, optoelectronic devices across the near-and mid-IR.Silicon photonics has seen rapid advances [1][2][3][4][5][6][7][8][9][10][11][12] and the technology is seen not just as required for next-generation computers but also as a vehicle for a wide range of other high value and important, societal, environmental, security, and health applications, such as greenhouse gas and explosive residue sensing, and fast medical diagnostics. [ 13 ] REs elements in silicon have long been considered promising for optical sources, and more recently for quantum technologies. [ 14 ] The partially fi lled inner 4 f -shell gives sharp internal transitions highly insensitive to crystal host and temperature and many of the transitions have intrinsic gain and support lasing. However, because the transitions are internal to the RE they have not been seen so far as a particularly promising route to photodetectors.Light emission at 1.54 µm due to Er ions in III-V and Si has been extensively investigated and light emitting devices successfully demonstrated although with limited effi ciency. [15][16][17][18][19][20][21] PL and EL from silicon and III-V semiconductors incorporating the RE thulium have also been achieved-transitions between the Tm 3+ lowest excited states and the ground state lead to emissions around 0.8, 1.2, and 2 µm. [22][23][24] Both Er and Tm in silicon, and indeed all others RE reported in silicon Silicon-Modifi ed Rare-Earth Transitions-A New Route to Near-and Mid-IR Photonics Manon A. Lourenço , * Mark A. Hughes , Khue T. Lai , Imran M. Sofi , Willy Ludurczak , Lewis Wong , Russell M. Gwilliam , and Kevin P. Homewood Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on ...

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