The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobility under the compression along crystallographic axis [111] is connected with a change in their scattering on large-scale defect formations.
In this paper the strain thermal Hall effect has been investigated in initial n-Si(P) and strongly compensated n-Si(Ni) samples of different compensation degree, which have been subject to uniform hydrostatic compression (UHC) under a pulse pressure regime ranging from 0 to 7×108 Pa. An experimental investigation of the strain thermal effect in the n-Si(Ni) sample leads to an essential strain conductivity increase, which is largely controlled by density variations of majority carriers.
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