Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors

Msimanga, M.; McPherson, M.

doi:10.1016/j.mseb.2005.09.060

Cited by 21 publications

(16 citation statements)

References 15 publications

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“…This work adds on that presented on RBS results presented earlier [10,18] since the diffusion of metals was speculated. The results presented here are thus used to explain features that could not be explained by the RBS data and also confirm that metals diffuse in silicon at 900…”

Section: Overall Discussionsupporting

confidence: 69%

“…In order to improve the properties of the devices, the silicon material can be doped with metals such as gold, platinum, erbium, or niobium [4][5][6][7][8][9][10][11]. These metals are responsible for a change in material behaviour from lifetime to relaxation [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…These metals are responsible for a change in material behaviour from lifetime to relaxation [9][10][11]. In relaxation material, τ D τ 0 while in lifetime material, τ D τ 0 [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

Moloi

McPherson

2017

Acta Phys. Pol. A

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Depth analysis of metal-doped crystalline silicon by the X-ray photoelectron spectroscopy technique is presented in this work. The results from this technique are used to complement those from previous techniques. The metals diffused into the silicon are gold, platinum, erbium, and niobium. In silicon, these metals induce defects that are responsible for relaxation behaviour of the material. Relaxation material is radiation-hard since the effects of radiation on devices fabricated on the material are suppressed. Considerable amounts of gold, platinum, and niobium are found in the silicon bulk. The results of this work are in good agreement with those reported earlier on the same samples using the Rutherford backscattering technique. The spectra of the natural contaminants, carbon and oxygen, are also analysed in this work.

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Section: Overall Discussionsupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

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Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

Moloi

McPherson

2017

Acta Phys. Pol. A

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“…Since the charge distribution is due to defects at the intrinsic Fermi-level position, the material has attained its intrinsic likeness in this scenario. The inherent level of the Fermienergy is independent of incident radiation [15], resulting in a stability of the diodes fabricated on the material during the operation.…”

Section: Introductionmentioning

confidence: 99%

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Oeba

Bodunrin

Moloi

2022

Preprint

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The electrical properties of diodes fabricated on undoped and zinc-doped n-silicon were investigated in this study using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) techniques. The diode’s forward current decreased by a factor of ~ 3, while the reverse current increased by a factor of ~ 37, confirming that the charge carrier recombination/ compensation is due to the generation of minority carrier to increase the resistivity of the material upon doping with zinc (Zn). The generation of the minority carrier was confirmed by inversion of the material conductivity form n- to p-type, as shown by C-V results. Furthermore, the findings reveal that Zn is responsible for a reduction in full depletion voltage (FDV), implying that the space charge region (SCR) width can be fully depleted with a relatively low applied voltage. For the manufacturing of sensitive radiation detectors, a low FDV is critical. A change in the electrical properties of the diode was explained in terms of defects induced in the Si bulk by Zn. The properties of Zn-doped n-Si-based diodes are similar to those of radiation-hard Si devices. In general, the findings suggest that Zn might be employed as a possible dopant in a study to improve the characteristics of Si to fabricate radiation-hard and sensitive detectors for current and future high energy physics experiments.

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“…Nowadays the ionizing radiation is widely used for modification and control of semiconducting material properties [1][2][3]. Due to perfect modern technology processing of crystalline silicon and good compatibility of different silicon components with the highsensitivity electronic signal registration equipment a reasonably high attention is devoted to the investigation of silicon and its structure properties modified by an ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

Capacitance-voltage characteristics of Si structures irradiated by protons and their frequency and temperature dependences

Sakalauskas¹,

Puras²

2009

Lithuanian J. Phys.

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Experimental capacitance-voltage (C-V ) characteristics of silicon p-i-n diodes irradiated with high energy protons and capacitance dependences on frequency and temperature are presented in the paper and results are discussed. The higher fluencies of proton irradiation lead to the larger capacitance values of diodes biased to reverse voltage in the range of 20-120 Hz frequency, given the other conditions are the same. The capacitances of irradiated diodes are considerably higher than the barrier capacitances of non-irradiated ones. The energy of dominant defect deep level was calculated according to analysis of capacitance-voltage dependences on frequency and temperature.

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Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors

Cited by 21 publications

References 15 publications

Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Capacitance-voltage characteristics of Si structures irradiated by protons and their frequency and temperature dependences

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