Diffusion Barriers for Ultra-Large-Scale Integrated Copper Metallization

Köhn, A.; Eizenberg, M.

doi:10.1007/978-0-387-95868-2_7

Cited by 6 publications

(3 citation statements)

References 77 publications

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“…9 (b) due to the existence of some metallic regions in this unsaturated nitride film. A bias and thermal stress (BTS) test is typically applied in the semiconductor industry for evaluating the diffusion resistance of barrier materials and offers the advantage of insitu tracking the degradation of microelectronic devices caused by migrated Cu ions (27). However, in academic researches, due to the limit of metrology tools, most of the studies on barrier abilities are performed conventionally by thermal annealing and the subsequent microscopic characterizations of interface reactions and depth-profiling analyses of element accumulations (6)(7)(8)(9)(10)(11)(12)(13)(14).…”

Section: Resultsmentioning

confidence: 99%

Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Chang

Chen

2010

ECS Trans.

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In this study, (AlCrTaTiZr)N0.7 and (AlCrTaTiZr)N1 films of only 10 nm thick have been developed as diffusion barrier materials for Cu interconnects. An AlCrTaTiZr buffer layer of 5 nm thick was deposited on these barriers to form (AlCrTaTiZr)N0.7/AlCrTaTiZr and (AlCrTaTiZr)N1/AlCrTaTiZr bilayer structures, as well as to improve the interface adhesion to Cu layers. The as-deposited AlCrTaTiZr and (AlCrTaTiZr)N0.7 films were amorphous, while the (AlCrTaTiZr)N1 was observed as a nanocomposite structure with nanocrystallites embedded in an amorphous matrix. At a high temperature of 800oC, Cu began to penetrate into the AlCrTaTiZr buffer layer, but its diffusion was retarded by the (AlCrTaTiZr)N0.7 and (AlCrTaTiZr)N1 barriers. At an extremely high temperature of 900oC, the interdiffusion of Si and Cu atoms occurred through the (AlCrTaTiZr)N0.7/AlCrTaTiZr bilayer, and Cu silicides formed; whereas the (AlCrTaTiZr)N1/AlCrTaTiZr bilayer remained stable. No interdiffusion through the (AlCrTaTiZr)N1/AlCrTaTiZr bilayer or formation of any silicides was identified, indicating an excellent diffusion resistance.

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Section: Resultsmentioning

confidence: 99%

Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Chang

Chen

2010

ECS Trans.

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“…Electrical characterization of device structures offers the potential for highly sensitive Cu trace analysis [18]. There are, however, significant differences in the sensitivity for Cu detection between p-and n-type silicon, as well as between several devices, like a p-n junction, Schottky diode or MOS capacitor.…”

Section: Characterization Of Barrier Performancementioning

confidence: 99%

Diffusion Barriers

Hecker¹,

Hübner²

2012

Advanced Interconnects for ULSI Technology

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“…Often performed in the semiconductor industry for evaluating the diffusion resistance of barrier materials, a bias and thermal stress test offers the advantage of in situ tracking of the degradation of microelectronic devices caused by migrated Cu ions. 31 However, in academic research, due to the limitations of metrology tools, most studies on barrier examinations are performed conventionally by thermal annealing and the subsequent microscopic characterizations of interface reactions and depth-profiling analyses of element accumulations. [6][7][8][9][10][11][12][13][14][15][16][17][18] This study also evaluates the diffusion resistance based on the conventional method.…”

Section: Lattice Planementioning

confidence: 99%

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

Chang

Chen

2010

J. Electrochem. Soc.

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In this study, ͑AlCrTaTiZr͒N 0.7 and ͑AlCrTaTiZr͒N 1 films with quinary metallic elements were developed as diffusion barrier materials for Cu interconnects. To improve the interface adhesion to Cu, an AlCrTaTiZr buffer layer was deposited on the barriers to form ͑AlCrTaTiZr͒N 0.7 /AlCrTaTiZr and ͑AlCrTaTiZr͒N 1 /AlCrTaTiZr bilayer structures. The as-deposited AlCrTaTiZr and ͑AlCrTaTiZr͒N 0.7 films were amorphous structures, and ͑AlCrTaTiZr͒N 1 possessed a nanocomposite structure. After annealing at 800°C, although Cu penetrated into the AlCrTaTiZr buffer layer, the diffusion of Cu was retarded by the ͑AlCrTaTiZr͒N 0.7 and ͑AlCrTaTiZr͒N 1 barriers. During annealing at 900°C, the interdiffusion of Si and Cu occurred through the ͑AlCrTaTiZr͒N 0.7 /AlCrTaTiZr bilayer, and Cu silicides formed. However, the ͑AlCrTaTiZr͒N 1 /AlCrTaTiZr bilayer remained stable. Neither the interdiffusion of Cu and Si through the ͑AlCrTaTiZr͒N 1 /AlCrTaTiZr bilayer nor the silicide formation was identified, indicating the high diffusion resistance of the bilayer structure.

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Diffusion Barriers for Ultra-Large-Scale Integrated Copper Metallization

Cited by 6 publications

References 77 publications

Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Diffusion Barriers

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

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Diffusion Barriers for Ultra-Large-Scale Integrated Copper Metallization

Cited by 6 publications

References 77 publications

Ultra-Thin (AlCrTaTiZr)Nx/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Ultra-Thin (AlCrTaTiZr)Nx/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Diffusion Barriers

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

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Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization

Ultra-Thin (AlCrTaTiZr)N_x/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization