Diffusion barrier properties of metallorganic chemical vapor deposited NbN O C films for Cu metallization

Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride

“…An in situ Fourier transform infrared (FT-IR) surface study on TiN atomic layer deposition using TDMAT and NH 3 was consistent with transamination and amine dissociation [5]. The decrease in activation energy for the surface reaction upon addition of NH 3 during niobium nitride (NbN) CVD using ethylimido tris(diethylamido)niobium(V) [EtN=Nb(NEt 2 ) 3 ] also suggested the occurrence of transamination [13].…”

Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor

“…The potential applications of NbN are numerous due to the material's excellent mechanical stability, high temperature stability, and high melting point (5)(6)(7). The low-temperature superconductivity of cubic δ-NbN make it particularly attractive for the formation of Josephson junctions where two superconducting layers are put around an insulator (8).…”

“…Niobium nitride is an important material with potential for use as a wear-resistant layer, a gate electrode (due to a work function of >4.5eV) or a Cu diffusion barrier in microelectronics (1-4) . The potential applications of NbN are numerous due to the material's excellent mechanical stability, high temperature stability, and high melting point (5)(6)(7). The low-temperature superconductivity of cubic δ-NbN make it particularly attractive for the formation of Josephson junctions where two superconducting layers are put around an insulator (8).…”