2010
DOI: 10.1149/1.3485254
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Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor

Abstract: NbN films were deposited via plasma-enabled ALD from ( t BuN=)Nb(NEt 2 ) 3 and N 2 plasma. A wide temperature process window (250-350°C) was demonstrated. Films had an atomic ratio of Nb:N 0.9-0.95 and showed decreasing carbon contamination as the process temperature was increased.

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Cited by 5 publications
(4 citation statements)
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“…Sowa [17] demonstrated that using TBTDEN and plasma N 2 /H 2 , the ALD window was not observed and an increase in GPC as a function of the substrate temperature was found. Hinz et al…”
Section: Ald Windowmentioning
confidence: 99%
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“…Sowa [17] demonstrated that using TBTDEN and plasma N 2 /H 2 , the ALD window was not observed and an increase in GPC as a function of the substrate temperature was found. Hinz et al…”
Section: Ald Windowmentioning
confidence: 99%
“…shows that the density of the samples increased after annealing and S2 exhibited the highest density among all of the samples. existing information in previous studies on the ALD synthesis of NbN [14][15][16][17][18][19], the presence of carbon as an impurity in the classical ALD process could significantly impact the superconductivity. Therefore, the improvement of the Tc of our carbon-free samples after annealing is related to another parameter.…”
Section: Effect Of Annealing In Argonmentioning
confidence: 99%
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