Diffusion and Reactions of Photoinduced Interstitial Oxygen Atoms in Amorphous SiO₂ Impregnated with ¹⁸O-Labeled Interstitial Oxygen Molecules

Abstract

Both diffusion and reactions of interstitial oxygen atoms (O 0 ) in amorphous SiO 2 (a-SiO 2 ) were examined using oxygen-excess a-SiO 2 containing 18 Olabeled interstitial oxygen molecules (O 2 ) and exposed to F 2 laser light (hν = 7.9 eV). Both the F 2 laser photolysis of interstitial O 2 at 77 K and subsequent heat treatment at ≳200 °C give rise to oxygen exchange between residual interstitial O 2 and oxygen atoms in the a-SiO 2 network, and these temperatures are far lower than the temperature at which conventional thermal network-interstitial oxygen exchange in unirradiated a-SiO 2 occurs (≳700 °C). However, at the initial stage of the low-temperature F 2 laser photolysis, an efficient formation of interstitial ozone molecules (quantum yield ≳0.06) via nearly exchange-free diffusion of photogenerated interstitial O 0 is observed, and this reaction predominates over the network-interstitial oxygen exchange.

Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix

“…It is likely related to the difference in Cl concentrations in samples S2 and S0. Similar peak in UV resonance Raman spectra at 954 cm −1 has been assigned to Cl−O stretch in ClClO molecules On the other hand, it is well-known that O 2 in a-SiO 2 is less constrained by cage-effect, and that F 2 -laser photolysis creates mobile O atoms 32. Evidently, a reaction…”

Influence of <formula formulatype="inline"><tex Notation="TeX">${\hbox{O}}_2$</tex></formula>-Loading Pretreatment on the Radiation Response of Pure and Fluorine-Doped Silica-Based Optical Fibers

“…Furthermore, POR and Cl-related bands are not definitively isolated. Moreover, in the case of the F2D3-O2 sample, we needed to add the absorption band related to the interstitial ozone molecules, already reported in the literature [18], in order to fit the related spectra.…”

“…7(c), we report the decomposition of the difference of the two previous spectra. By comparing the II OPTICAL CHARACTERISTICS OF RADIATION-INDUCED ABSORPTION BANDS [1], [16], [17], [18], [19], [20], [21], [22] Required and used only for the fitting of F2D3-O2. From Reference [21] The spectral parameters fall within the variability of the values reported in literature.…”

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

“…However, the hydrogen passivation step was found to remove contaminants and to reduce substantially the accumulation of charges at the Si/SiO 2 interface (see Supporting Information, Figure ). The accumulation of negative charge after the hydrogen passivation step can arise because of the presence of positive trapped charges at the Si/SiO 2 interface or in the SiO 2 layer …”

“…The accumulation of negative charge after the hydrogen passivation step can arise because of the presence of positive trapped charges at the Si/SiO 2 interface [38][39][40] or in the SiO 2 layer. [34,41,42] Figure 7 shows that the position of the Si 0 peak shifts to lower binding energy for any deposition method, indicating that the deposition of NiO leads to the formation of a depletion layer in the silicon with a built-in voltage V bi >0. The binding energies at the interfaces with RF and DC sputtered NiO saturate at %99.2 eV, corresponding to a built-in potential of 0.4 V. This value is in line with what has been reported in the literature.…”