Diffusion and activation of phosphorus in germanium

Tsouroutas, P.; Tsoukalas, D.; Zergioti, I.; Cherkashin, Nikolay; Claverie, A.

doi:10.1016/j.mssp.2008.09.005

Cited by 14 publications

(7 citation statements)

References 18 publications

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“…In [10][11][12][13][14][15][16][17][18][19][20][21], the behavior of P and Sb was consistently explained by means of the double ionized vacancy mechanism:…”

Section: Continuum Theoretical Calculations Of Dopant Diffusion In Sementioning

confidence: 96%

“…Surprisingly, the experimental papers [7,8] did not take into account extrinsic diffusion and dopant diffusion models, suggested in 1968 [9] and developed later [10][11][12][13][14][15][16][17][18][19][20][21]. Since vacancy in germanium is mostly acceptor with charge state up to À3, then positively charged phosphorus ion makes Coulomb-coupled pair with a charged vacancy.…”

Section: Phosphorus Diffusion: First Stepsmentioning

confidence: 99%

“…A "box-shaped" P profile was also detected under ion implantation procedure [18][19][20][21]. The "quadratic model" was used to describe diffusion process.…”

Section: Continuum Theoretical Calculations Of Dopant Diffusion In Sementioning

confidence: 99%

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Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures

Petrovna¹,

Anfimov²,

Yurchuk³

2018

Advanced Material and Device Applications With Germanium

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This chapter gives a short review on dopant diffusion in germanium and specifies the underlying mechanisms of diffusion that involve the point defects. Box-shaped diffusion profiles are discussed that may be described as the phosphorus diffusion controlled by doubly ionized vacancies. In this mechanism, the diffusion coefficient depends on the electron concentration. The particulars of P and Ga diffusion profiles in the Ga-doped substrate of In 0.01 Ga 0.99 As/In 0.56 Ga 0.44 P/Ge heterostructures for multilayer solar cells are discussed. To calculate the diffusion coefficient, two methods were used: the Boltzmann-Matano (version of Sauer-Freise) and the coordinate-dependent diffusion analysis. It is established that coordinate-dependent diffusion analysis, which involves drift components together with diffusion components for diffusion profile description, is more suitable for description of the experimental profiles in such structures near p-n junction. A strong influence of intrinsic electric field on the dopant diffusivity was detected.

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“…In [10][11][12][13][14][15][16][17][18][19][20][21], the behavior of P and Sb was consistently explained by means of the double ionized vacancy mechanism:…”

Section: Continuum Theoretical Calculations Of Dopant Diffusion In Sementioning

confidence: 96%

Section: Phosphorus Diffusion: First Stepsmentioning

confidence: 99%

See 1 more Smart Citation

Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures

Petrovna¹,

Anfimov²,

Yurchuk³

2018

Advanced Material and Device Applications With Germanium

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“…This enhancement is related to the diffusion of donor impurities in Ge according to the vacancy mechanism [2]. The meth ods suggested so far for suppression of the enhanced diffusion of doping donor impurities in Ge were found to be effective only partly [3,4].…”

Section: Introductionmentioning

confidence: 99%

Formation and annealing of radiation defects in tin-doped p-type germanium crystals

et al. 2012

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“…Previously, laser annealed P junctions in Ge ͑X J Ͼ 70 nm͒ were investigated. 10,11 In this work, we investigate the feasibility of laser annealing to fabricate ultra shallow, low resistive As junctions in germanium. More specifically, the effects of the laser peak temperature and the combination with a preamorphization implant are studied.…”

mentioning

confidence: 99%

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

Hellings

Rosseel

Simoen

et al. 2011

Electrochem. Solid-State Lett.

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Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900°C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 ϫ 10 19 cm −3 for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.Germanium has received considerable attention in the last decade as a promising channel material for high performance logic applications. However, as scaling continues the source/drain resistance gains in importance. 1,2 Consequently, ultra shallow and low resistive junctions are required for the integration into very-large scale integration circuitry.Shallow, low resistive p-type junctions ͑using B or Ga as acceptors͒ can be attained using optimized solid phase epitaxial regrowth ͑SPER͒ and rapid thermal annealing ͑RTA͒ schemes. 3,4 In contrast, donors such as P or As show high concentration-enhanced diffusion; 5 a mechanism which has been consistently explained by mobile, negatively charged dopant-vacancy pairs. 6 The fabrication of ultra shallow junctions therefore requires a limited thermal budget ͑low temperature or fast anneal͒, while a high temperature is still needed to achieve a high electrically active concentration. These two competing requirements have led to the use of ultrafast heattreatment methods such as flash-assisted annealing 7-9 and millisecond laser thermal processing. Previously, laser annealed P junctions in Ge ͑X J Ͼ 70 nm͒ were investigated. 10,11 In this work, we investigate the feasibility of laser annealing to fabricate ultra shallow, low resistive As junctions in germanium. More specifically, the effects of the laser peak temperature and the combination with a preamorphization implant are studied.As junctions were fabricated using p-type, 300 mm, ͑100͒-oriented Si wafers on which a relaxed epitaxial Ge was grown ͑1.5 m thick, threading dislocation density Ϸ2 ϫ 10 7 cm −2 ͒ and capped with 2 nm of GeO 2 ͓which was stripped preceding secondary-ion mass spectroscopy ͑SIMS͒ and micro four-point probe tool ͑u4PP͒ analysis͔. The wafers received a boron well doping up to 3 ϫ 10 17 cm −3 , followed by a Ge preamorphization implant ͑PAI-Ge 20 keV, 2 ϫ 10 14 cm −2 ͒ on selected samples, yielding an amorphous layer of 25 nm. As was implanted at an energy of 5 keV ͑5 ϫ 10 14 cm −2 ͒. The samples then received millisecond laser annealing. The laser spot measures 1.1 cm ϫ 75 m and scans the wafer at a speed of 75 mm/s ͑two consecutive scans͒. A wafer preheating is applied ͑250°C͒ to reduce thermal stress arising from the localized laser heating. No absorber layer was deposited to assist in the laser anneal. Multiple regions ͑each measuring at least 5 ϫ 5 cm͒ were illuminated, whereby the laser ...

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Diffusion and activation of phosphorus in germanium

Cited by 14 publications

References 18 publications

Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures

Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures

Formation and annealing of radiation defects in tin-doped p-type germanium crystals

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

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