Diffraction line broadening analysis if broadening is caused by both dislocations and limited crystallite size

Abstract

ture that is a mixture of small grains with high dislocation density and large grains with low dislocation density, to a microstructure with large grains and low dislocation density.

Influence of Plastic Strain Accumulation in Continuous Ingots during ECAP on Structure and Recrystallization Temperature of AlCu4MgSi Alloy

“…An increase of the difference between ρ D (4.66 × 10 14 m −2 ) and ρ S (7.04 × 10 11 m −2 ) can point to small grains with a high dislocation concentration or large grains with low dislocation density being present in the microstructure. A similar relation has been described in [32]. For the sample annealed at 510 • C/2 h, the recorded mean crystallite size was estimated to be 94 nm, whereas the dislocation density-1.80 × 10 13 m −2 , which is the same value as in the case of the sample annealed at 390 • C. Based on the obtained results, we can state that at 510 • C, beside the above-mentioned processes, grain growth takes place as a result of secondary recrystallization.…”

Driving forces for texture transformation in thin Ag films

“…While dislocation densities in heavily deformed FCC metals can reach 10 15 -10 16 /m 2 , which would translate to total defect energies of 1360-13,600 kJ/m 3 , the actual dislocation densities in as-deposited PVD films are not well known. Studies reporting dislocation densities in this range on the basis of TEM investigations [35,36] and analysis of x-ray peak widths [37,38] in as-deposited FCC films have been published. However, Legros et al [36] note that the densities they obtained using TEM should be considered as upper limits with typical values nearer to 10 12 /m 2 , and Kamminga et al [38] note that dislocation densities obtained by XRD methods are not reliable due to the assumptions (sets of infinite, straight, parallel dislocations) underlying the analysis.…”

Luminescent properties and X-ray photoelectron spectroscopy study of ZnAl2O4:Ce3+,Tb3+ phosphor

“…It is well known that in addition to instrumental setup, the diffraction peak broadening is also a result of the crystallite sizes and lattice strains i.e. large crystallite sizes cause sharp reflections whereas small sizes lead to broad reflections, and variations in lattice spacings due to lattice strains can also cause broadening [26]. Since the same procedure was used to prepare all samples in this study, the crystallite size of the samples with or without activators (Ce 3+ and Tb 3+ ) are expected to be in the same range.…”