Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Abstract

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Probing charge traps at the 2D semiconductor/dielectric interface

“…Growing interest in 2D materials has recently stimulated the rapid development of suitable dielectric materials. 16–19,80 Fig. 2 highlights the important pillars in the evolution of 2D semiconductor/dielectric heterostructures and interface engineering.…”

“…5,8–15 While early studies were focused on the intriguing properties of 2D semiconductors, more attention is now drawn towards the integration of these materials into modern electronic device architectures with state-of-the-art dielectrics. 16–19 A comprehensive approach to understand the performance of 2D semiconductor devices relies on a thorough evaluation of the material quality as well as the 2D semiconductor/dielectric interface. 20,21 With the recent advances in the synthetic growth of 2D semiconductors and gradual improvements in their quality, 22–24 the 2D semiconductor/dielectric interface has become a dominant factor in limiting the device performance.…”

Wafer-scale synthesis of two-dimensional ultrathin films

“…Atomic-layered hexagonal boron nitride (hBN), also known as white graphite, due to its excellent stability and large bandgap, has been reported to be the best 2D insulator, serving as a platform for charge fluctuation, contact resistance, gate dielectrics, passivation layers, and atomic tunneling layers. 33–38 Although micrometer-sized hBN grains have been commonly employed for fundamental studies, the commercial level manufacture of wafer-scale single-crystalline hBN films for practical applications remains a challenge. Due to the three fold symmetry of the hBN lattice and high nucleation density during the growth process, antiparallel domains and twin boundaries of hBN are commonly formed in most substrates.…”

Interference-Modulated Excitonic Reflectance of Monolayer MoSe2 on Epitaxial Gd2O3 Thin Films

“…Among diverse dielectric materials, high-κ (κ: dielectric constant) metal-oxide dielectrics have been widely investigated for tuning the photoluminescence (PL) and electrical transport properties of various TMDC MLs. − Dielectric materials offer a potential low-loss alternative to plasmonic metamaterials at optical frequencies, which can aid to the fabrication of TMDC-based superior resonant reflectors. , Among various metal oxide dielectrics, rare earth oxides (REOs) with high refractive indices (1.75–1.95) represent a class of multifunctional materials with significant potential for their applications in photonic and optoelectronic devices . Our previous report demonstrated modulation of PL characteristics of MoSe 2 MLs by epitaxial Gd 2 O 3 thin films …”