Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures

Gowtham, B.; Balasubramani, V.; Ramanathan, Sivakumar; Ubaidullah, Mohd; Shaikh, Shoyebmohamad F.; Gedi, Sreedevi

doi:10.1016/j.jallcom.2021.161490

Cited by 27 publications

(9 citation statements)

References 48 publications

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“…This deals with the increase in orientation polarization, which leads to an increase in dielectric constant. [22][23][24][25][26][27][28][29][30][31][32][33] The mobility of charge carriers increases due to increased temperature. This case causes an increase in the dielectric loss.…”

Section: Resultsmentioning

confidence: 99%

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Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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Section: Resultsmentioning

confidence: 99%

“…In addition, the ac conductivity may be analyzed by Arrhenius equation defined as follows 23,28,[38][39][40][41] I indicates the computed values of E a and σ 0 . While the E a value for Region 1 decreases with increase in the frequency, the E a value for Region 2 increases with the increase in temperature.…”

Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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“…It can be seen that R P showed the NTC effect, whereas C P increased with the increase of temperature. This may be partially due to the increase of the lattice and partially due to the excitation of the charge carriers, which are likely to be present inside the V O defects [40]. Furthermore, both LRS and HRS C P were in the order of 10 -11 F, which showed that C P and their associated resistances represented GB effect [21,22].…”

Section: Effect Of Y-doping On Is Of Rram Devicesmentioning

confidence: 94%

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Bai

Xie

et al. 2023

Nanotechnology

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Y-doping can effectively improve the performance of HfOx-based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y doping affecting the performance of HfOx-based memristors is still missing and unclear. Although impedance spectroscopy (IS) has been widely used to investigate impedance characteristics and switching mechanisms of RRAM devices, there is less IS analysis on Y-doped HfOx-based RRAM devices as well as devices at different temperatures. Here, the effect of Y doping on the switching mechanism of HfOx-based RRAM devices with a Ti/HfOx/Pt structure were reported using current–voltage (I–V) characteristics and IS. The results indicated that doping Y into HfOx films could decrease the forming/operate voltage and improve the RS uniform. Both doped and undoped HfOx-based RRAM devices obeyed the oxygen vacancies (Vo) conductive filament model along the grain boundary (GB). Additionally, the GB resistive activation energy of the Y-doped device was inferior to that of the undoped device. It exhibited a shift of the Vo trap level towards the conduction band bottom after Y doping in the HfOx film, which was the main reason for the improved RS performance.

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“…In addition, WO 3 particles provide the possibility of their homogeneous dispersion on the surface of EGaIn with no need for surfactants that allow good free charge carrier exchange between the two materials . WO 3 is intrinsically a n-type semiconductor, with a band gap in the range of 2.6–3.2 eV, for which the valence and conduction bands are formed by filled O 2p orbitals and empty W 5d orbitals, respectively. − While relatively stable at near room temperature, WO 3 shows interactions with a variety of gases at elevated temperatures based on different mechanisms (such responses are presented in Table S1). ,− The resistance of WO 3 decreases when exposed to reducing gas species which donate free electrons to the surface, while its resistance increases when interacting with oxidizing gases which induce an electron depletion layer by attracting electrons from surface W atoms. ,, In addition, WO 3 is known to form substoichiometric states (WO 3– x ) using a variety of facile processes, which lead to electrical conductivity increases due to O deficiency.…”

Section: Introductionmentioning

confidence: 99%

Insights into the Interfacial Contact and Charge Transport of Gas-Sensing Liquid Metal Marbles

Chi

Han

Zheng

et al. 2022

ACS Appl. Mater. Interfaces

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Understanding the interfacial contacts between liquid metals and substrate materials is becoming increasingly important for the fast-rising liquid metal-enabled technologies. However, for such technologies, probing the contact behavior and interfacial charge transport has remained challenging due to the deformable nature of liquid metals and the presence of the surface oxide layer. Here, we encapsulate eutectic gallium indium (EGaIn) micro-/nanodroplets with tungsten trioxide (WO3) nanoparticles to form a WO3/EGaIn liquid metal marble network, in which the interfacial contact of the intrinsically semiconducting WO3 governs the charge transport. We investigate the interfacial structures and charge transport characteristics under different contact conditions and various gaseous environments. The results suggest that establishing a WO3/EGaIn heterostructure leads to near-ohmic contact behaviors and also the emergence of localized surface plasmon resonance. Density functional theory calculations of the WO3/EGaIn interface support the experiments by revealing atomistic attractions between EGaIn alloy and the O atoms from WO3, resulting in a Fermi level shift. We also show that the efficient interfacial charge transport of the liquid metal marble network results in an enhanced gas-sensing response. This work paves the way for the possibility of studying other liquid metal/semiconductor contacts for applications in soft electronics and optics.

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Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures

Cited by 27 publications

References 48 publications

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices

Insights into the Interfacial Contact and Charge Transport of Gas-Sensing Liquid Metal Marbles

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Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures

Cited by 27 publications

References 48 publications

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

Insights into the Interfacial Contact and Charge Transport of Gas-Sensing Liquid Metal Marbles

Contact Info

Product

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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO _x -based RRAM devices