Dielectric Rear Surface Passivation for Industrial Multicrystalline Silicon Solar Cells

Schultz, Oliver; Rentsch, J.; Grohe, A.; Glunz, Stefan W.; Willeke, G.

doi:10.1109/wcpec.2006.279598

Cited by 8 publications

(10 citation statements)

References 10 publications

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“…80% achieved on large area multicrystalline silicon solar cells in a different study. 15 The average efficiencies for all materials were about 18%, close to 20%, were measured for small area cells of 1 cm 2 , independent of doping type or concentration. The 19Á8% efficiency for the 4 cm 2 cell made from ScanWafer material represents the highest value for a multicrystalline silicon solar cell of this size.…”

Section: Solar Cell Resultssupporting

confidence: 56%

High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

Schultz

Glunz

Riepe

et al. 2006

Prog. Photovolt: Res. Appl.

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Measurements of the dislocation density are compared with locally resolved measurements of carrier lifetime for p-type multicrystalline silicon. A correlation between dislocation density and carrier recombination was found: high carrier lifetimes (>100 ms) were only measured in areas with low dislocation density (<10 5 cm À2 ), in areas of high dislocation density (>10 6 cm À2 ) relatively low lifetimes (<20 ms) were observed. In order to remove mobile impurities from the silicon, a phosphorus diffusion gettering process was applied. An increase of the carrier lifetime by about a factor of three was observed in lowly dislocated regions whereas in highly dislocated areas no gettering efficiency was observed. To test the effectiveness of the gettering in a solar cell manufacturing process, five different multicrystalline silicon materials from four manufacturers were phosphorus gettered. Base resistivity varied between 0Á5 and 5 V cm for the boron-and gallium-doped p-type wafers which were used in this study. The high-efficiency solar cell structure, which has led to the highest conversion efficiencies of multicrystalline silicon solar cells to date, was used to fabricate numerous solar cells with aperture areas of 1 and 4 cm 2 . Efficiencies in the 20% range were achieved for all materials with an average value of 18%. Best efficiencies for 1 cm 2 (20Á3%) and 4 cm 2 (19Á8%) cells were achieved on 0Á6 and 1Á5 V cm, respectively. This proves that multicrystalline silicon of very different material specification can yield very high efficiencies if an appropriate cell process is applied. HIGH EFFICIENCY mc-Si SOLAR CELLS 715 Ã Independent calibrated measurement at Fraunhofer ISE CalLab. y Independent calibrated measurement at NREL.

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Section: Solar Cell Resultssupporting

confidence: 56%

High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

Schultz

Glunz

Riepe

et al. 2006

Prog. Photovolt: Res. Appl.

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“…In particular, laser ablation processes are required in monolithic interconnection of thin film photovoltaic modules 1,2. Moreover, it has been demonstrated that processes involving lasers as a crucial tool, such as laser grooved buried front contact (LGBC)3 and laser fired contact (LFC)4 improve efficiencies for crystalline silicon photovoltaic devices. Consequently, research in laser processing of the materials used in the photovoltaic industry has become a highly attractive field, especially since laser technology developments have the potential to further improve the performance of photovoltaic devices 5…”

Section: Introductionmentioning

confidence: 99%

Laser ablation modelling of aluminium, silver and crystalline silicon for applications in photovoltaic technologies

Colina

Molpeceres

Morales

et al. 2011

Surface Engineering

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Laser material processing is being extensively used in photovoltaic applications for both the fabrication of thin film modules and the enhancement of the crystalline silicon solar cells. The two temperature model for thermal diffusion was numerically solved in this paper. Laser pulses of 1064, 532 or 248 nm with duration of 35, 26 or 10 ns were considered as the thermal source leading to the material ablation. Considering high irradiance levels (10 8 -10 9 W cm -2 ), a total absorption of the energy during the ablation process was assumed in the model. The materials analysed in the simulation were aluminium (Al) and silver (Ag), which are commonly used as metallic electrodes in photovoltaic devices. Moreover, thermal diffusion was also simulated for crystalline silicon (c-Si). A similar trend of temperature as a function of depth and time was found for both metals and c-Si regardless of the employed wavelength. For each material, the ablation depth dependence on laser pulse parameters was determined by means of an ablation criterion. Thus, after the laser pulse, the maximum depth for which the total energy stored in the material is equal to the vaporisation enthalpy was considered as the ablation depth. For all cases, the ablation depth increased with the laser pulse fluence and did not exhibit a clear correlation with the radiation wavelength. Finally, the experimental validation of the simulation results was carried out and the ability of the model with the initial hypothesis of total energy absorption to closely fit experimental results was confirmed.

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“…Semiconductor technology or microelectronics including solar cells has been adopted to form micro- or nano-sized state-of-the-art structures which can reduce system size, improve its performance, achieve lower system cost, and so on [1-3]. Generally, a semiconductor structure or system is manufactured by a combination of additive (film deposition) and subtractive (etching) processes.…”

Section: Introductionmentioning

confidence: 99%

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

et al. 2012

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In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.

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Dielectric Rear Surface Passivation for Industrial Multicrystalline Silicon Solar Cells

Cited by 8 publications

References 10 publications

High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

Laser ablation modelling of aluminium, silver and crystalline silicon for applications in photovoltaic technologies

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

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