Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices

Wagle, Shaila; Shirodkar, V. S.

doi:10.1590/s0103-97332000000300012

Cited by 9 publications

(8 citation statements)

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“…In the region II (at middle bias), I F changes with V 3.7 and this indicates current conduction shows power law voltage dependence and obeys the space-charge limited current (SCLC) theory. In the region III (at strong bias), the slope is 2 and this also indicates SCLC theory and in this region, because of strong carrier injection, the carriers escape from the traps and contribute to SCLC [22,[24][25][26][27].…”

Section: Resultsmentioning

confidence: 67%

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer. © 2014 Elsevier B.V. All rights reserved

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Section: Resultsmentioning

confidence: 67%

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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“…This type of high field conduction mechanism has also been found in some other materials. 30,37,38 Temperature Dependence of the Threshold Voltage V th…”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Kalkan

Baş

2015

Journal of Elec Materi

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The electrical conductivity of TlBiSe 2 narrow gap semiconductors prepared by the Bridgman-Stockbarger method was investigated. The temperature dependence of the electrical conductivity was measured to establish the dominant conductivity mechanism in a temperature range between 293 K and 373 K. The conduction activation energy has a single value indicating the existence of one type of conduction mechanism in the investigated temperature range. The electrical conductivity of the sample is controlled by a thermally activated mechanism. It was also found that these samples exhibit a current-controlled negative resistance and threshold switching. The value of the threshold voltage decreases exponentially with increasing temperature. The calculated ratio of the threshold energy to the activation energy is one half, and is derived from the electro-thermal model for the switching process. Therefore, the electrical switching in the investigated samples can be explained in terms of the electro-thermal model. A possible conduction mechanism in the pre-switching state of the sample associated with the space charge limited current is described.

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“…On the other hand, ln(I)À ln(V) plot for D 2 diode have two distinct linear regions (region 1: À 2.5 VoVo À 0.002V and region 2: 0.6VoVo1.61V) and their slope were found as 3.70 and 1.62. It is clear that the current conduction, at low bias region (region 1) for both diodes show almost the ohmic behavior, that is, the current is directly proportional to applied bias voltage [37][38][39][40]. On the other hand, in the second region, for both diodes the I-V relation can be characterized by power law dependence.…”

Section: Resultsmentioning

confidence: 83%

“…In this case, the increase in the number of injected electrons causes filling up the traps and coming up the space charges [37]. For D 2 diode, at strong forward bias region (region 3), because of the strong electron injection, the electrons escape from the traps and contributes to space-charge-limited-current [36][37][38][39][40].…”

Section: Resultsmentioning

confidence: 99%