Dielectric properties of percolative BaTiO3/Ni composite film fabricated by aerosol deposition process

Kim, Jin Hyeon; Kim, Hongki; Lee, Seung Hwan; Lee, Sung-Gap; Kim, Jae‐Sik; Kim, Ju-Sung; Lee, Young-Hie

doi:10.1007/s10854-016-4874-x

Cited by 8 publications

(3 citation statements)

References 17 publications

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“…Here, we note that the determination of the actual In diffusion parameters for an InGaAsP surface is not accessible by the present growth technique (MOVPE), but would be possible in molecular beam epitaxy (MBE) due to the temperature-dependent size of the "halo" formed around the droplets, which is directly linked to the group-III metallic droplet diffusion length. [29,[38][39][40][41] In this respect, studies are found for In on InP, [40] In on In 0.53 Ga 0.47 As, [29] In on In 0.52 Al 0.48 As, [42] In on GaAs, [41] and Ga on GaAs, [38,39] and to the best of our knowledge, studies of the In diffusion on InGaAsP surfaces are not known. Finally, it is worth pointing out that even though the QDs are not directly formed from the initial droplets as was found for the "standard" DE mode (see, e.g., our previous work on InAs/InP QDs), [12] there is no evidence for the presence of a strained wetting layer, confirmed by the optical characterizations in this work.…”

Section: Resultsmentioning

confidence: 99%

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Sala,

Na,

Godsland

et al. 2023

Physica Rapid Research Ltrs

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The growth of InAs quantum dots (QDs) by droplet epitaxy (DE) in Metal‐Organic Vapour Phase Epitaxy (MOVPE) is demonstrated for the first time on an InGaAsP layer lattice‐matched to InP(100). The nucleation of Indium droplets on InGaAsP shows a strong dependence on the deposition temperature, with an unexpectedly low density, pointing to a strongly increased surface diffusion compared to bare InP or InGaAs surfaces previously reported. Droplets and surface morphology are characterized via Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Droplet crystallization into InAs QDs is explored, where the crystallization process follows a modified DE growth which resembles the one on InGaAs but strongly differs from bare InP. Also, no formation of Quantum Dashes (QDashes) is observed, as the DE growth technique used here allows for a better control of QD nucleation, decoupled from the layer/epilayer mismatch, favoring the formation of QDs over QDashes. Optical characterizations suggest a more efficient carrier capture into the QDs if these are grown on InGaAsP compared to InGaAs. Finally, bright single‐dot emission at low‐temperature is detected from QDs ranging from 1300 to 1600 nm, covering the technologically relevant telecom C‐band.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Sala,

Na,

Godsland

et al. 2023

Physica Rapid Research Ltrs

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“…Figure 12 is a crosssectional image of a PE-ALD SiN x C y layer deposited using bis(dimethylamino)dimethylsilane (BDMADMS) and a hydrogen plasma, and shows good conformality. 33)…”

Section: Pe-ald For Cu Metallization In Beolmentioning

confidence: 99%

Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

2014

Jpn. J. Appl. Phys.

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With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.

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“…The enhancement of ε r ' for ceramic-metal composites at the percolation threshold is typically for a factor of a few tens. However, the tan(δ), also referred to as dielectric losses, also tends to increase by a similar amount [16][17][18]. For example, for BaTiO 3 /(Ni 0.3 Zn 0.7 )Fe 2.1 O 4 composites, both the ε r ' and dielectric losses, tan(δ), were reported to have increased by a factor of 10 [19].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Structural and Electrical Properties of Al2O3/Al Composites Prepared by Aerosol Co-Deposition

et al. 2023

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As the microelectronic industry develops, components that can perform several different tasks receive increasingly more attention, resulting in multifunctional materials being highly sought after. Al2O3 is widely present in electronic applications as a protective coating or as an electrical and thermal insulator due to its mechanical and thermal stabilities and chemical inertness. Al2O3 is also an important dielectric material, with high resistivity and stable permittivity over a wide range of temperatures and electric fields, but its modest permittivity necessitates large effective areas or extremely thin layers when a large capacitance is desired. Composites consisting of discrete conducting phases within an insulating matrix can produce large capacitance via Maxwell–Wagner polarization. In this work, Al2O3/Al composite thick films with different volume ratios of Al were prepared using the aerosol deposition method. A relative dielectric permittivity (εr′) of 800 at 1 MHz was achieved at 27 vol% of Al, a sixty-sevenfold enhancement compared to Al2O3. On the other hand, dielectric losses, tan(δ), at 1 MHz increased from 0.01 for Al2O3 up to 0.58 for the composite with 27 vol% of Al. A finite-element model of the composites was implemented, supporting the nonlinear electrical behavior of the composites as function of vol% of Al. Our results show novel possibilities for the applications of Al2O3-based materials in the microelectronic industry, especially for temperature-sensitive applications, for which the integration strengths of aerosol deposition are valuable.

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Dielectric properties of percolative BaTiO3/Ni composite film fabricated by aerosol deposition process

Cited by 8 publications

References 17 publications

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Investigation of Structural and Electrical Properties of Al2O3/Al Composites Prepared by Aerosol Co-Deposition

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