Dielectric properties of I-III-VI2-type chalcopyrite semiconductors

Abstract

Dielectric properties of I-III-VI 2 -type ternary chalcopyrite semiconductors, including linear and second order nonlinear optical susceptibilities at 10.6 m, have been quantitatively studied from the chemical bond viewpoint. Contributions from each type of constituent chemical bond, i.e., I u VI and III u VI bonds, to the total linear and nonlinear optical properties of these compounds at 10.6 m have been theoretically determined. The chemical bond method quantitatively expresses the trends in the dielectric properties of these compounds, which is helpful for carrying out modeling of their properties.

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

“…The properties include the ionic character, the charge distribution, the degree of polarity of the bond dissociation energies, the bond moments and the force constants [4]. [5,6,7,8].…”

Influence of YAB:Cr3+ nanocrystallite sizes on two‐photon absorption of YAB:Cr3+

“…So we have used the parameters of the band structure and dipole moments for the estimations of the hyperpolarizabilities using the Betzler method [25]. Temperature-dependent terms were included within the formalism developed by us within a framework of the photoinduced electron-phonon interactions [26].…”

A comparative study on pure, l-arginine and glycine doped ammonium dihydrogen orthophosphate single crystals grown by slow solvent evaporation and temperature-gradient method

“…The magnitude of dielectric constant depends on the degree of polarization charge displacement in the crystals. The dielectric constant of materials is due to the contribution of electronic, ionic, dipolar and space charge polarizations, which depend on frequencies [28][29]. At low frequencies, all these polarizations were active [12,30].…”