2014
DOI: 10.12691/jmpc-2-2-2
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Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Abstract: In order to enhance the viability of this paper for that issue, we suggest adding this to the beginning of IV C 2 V ) structured solids. The electronic polarizability (α), refractive index (n), band gap (E g ) and optical electronegativity (∆χ) of these solids exhibit a linear relationship when plotted against the average atomic number constituent atoms (Z av ), but fall on different lines due to the region of product of the ionic charges (PIC) of the compounds. We have applied the proposed relation on these s… Show more

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Cited by 16 publications
(12 citation statements)
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References 34 publications
(49 reference statements)
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“…The band gap is connected to the refractive index by many relations based on the photo effect studies derived by Mott and Gurney. Among these models, Moss, 93 Kumar and Sight, 94 Herve‐Vandamme, 95 and Duffy, 96 which can be mathematically described below: Moss2emngoodbreak=95/Eg4goodbreak=3.12Eg.4$$ \mathrm{Moss}\kern2em n=\sqrt[4]{95/{E}_g}=3.12\sqrt[4]{E_g.} $$ Hervegoodbreak−Vandamme2emngoodbreak=1+A/Eg+B2,normalAgoodbreak=13.60.25emeV,normalBgoodbreak=3.47.$$ \mathrm{Herve}-\mathrm{Vandamme}\kern2em n=\sqrt{1+{\left(A/\left({E}_g+B\right)\right)}^2},\mathrm{A}=13.6\ \mathrm{eV},\mathrm{B}=3.47.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The band gap is connected to the refractive index by many relations based on the photo effect studies derived by Mott and Gurney. Among these models, Moss, 93 Kumar and Sight, 94 Herve‐Vandamme, 95 and Duffy, 96 which can be mathematically described below: Moss2emngoodbreak=95/Eg4goodbreak=3.12Eg.4$$ \mathrm{Moss}\kern2em n=\sqrt[4]{95/{E}_g}=3.12\sqrt[4]{E_g.} $$ Hervegoodbreak−Vandamme2emngoodbreak=1+A/Eg+B2,normalAgoodbreak=13.60.25emeV,normalBgoodbreak=3.47.$$ \mathrm{Herve}-\mathrm{Vandamme}\kern2em n=\sqrt{1+{\left(A/\left({E}_g+B\right)\right)}^2},\mathrm{A}=13.6\ \mathrm{eV},\mathrm{B}=3.47.…”
Section: Resultsmentioning
confidence: 99%
“…The band gap is connected to the refractive index by many relations based on the photo effect studies derived by Mott and Gurney. Among these models, Moss, 93 Kumar and Sight, 94 Herve-Vandamme, 95 and Duffy, 96 which can be mathematically described below:…”
Section: Refractive Index and Extinction Coefficient And Optical Diel...mentioning
confidence: 99%
“…4, a, leads to two linear sections with different slopes (1 at low E and 2 at higher E). The latter indicates the possibility of describing the reverse VAC model of a current limited by a volumetric charge (the ideal Mott-Gurney model) [20].…”
Section: Volt-ampere Characteristics Of the Structurementioning
confidence: 99%
“…4, а, приводит к двум линейным участкам с разными наклонами (1 при низких E и 2 при более высоких E). Последнее указывает на возможность описания обратной ВАХ моделью тока, ограниченного объемным зарядом (идеальная модель Мотта-Гурни) [20].…”
Section: вольт-амперные характеристики структурыunclassified