Dielectric properties of hydrothermally epitaxied I–V perovskite thin films

Tan, Chee Kiang Ivan; Goh, Gregory K. L.; Cheah, Wei Li

doi:10.1016/j.tsf.2006.11.109

Cited by 19 publications

(23 citation statements)

References 40 publications

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“…The permittivity gain from increase in tetragonality is not evident at such temperatures. This is in agreement with reports by Chien et al , 19 McCormick and Slamovich, 12 and Tan et al 28 along with our studies. For baking till 350°C, all these results point that although the crystallinity marginally increases with baking, the removal of water and OH groups and the corresponding reduction in polarization contribution dominate and result in a lowered dielectric constant.…”

Section: Resultssupporting

confidence: 94%

“…2). Hydrothermal films directly grown on conducting oxides or platinum with no titanium layer underneath showed a higher permittivity with hightemperature baking as shown in Tan et al 28 and Chien et al 19 For hydrothermal powders, removal of OH even at low temperatures is shown to increase the permittivity in some reports, which is not in agreement with the above results with thin films. Maie and Lee 29 show no variation in dielectric constant till about 2001C heat treatment, which is then followed by an increase in the dielectric constant with the increasing temperatures.…”

Section: Resultsmentioning

confidence: 75%

“…2). Hydrothermal films directly grown on conducting oxides or platinum with no titanium layer underneath showed a higher permittivity with high‐temperature baking as shown in Tan et al 28 and Chien et al 19 …”

Section: Resultsmentioning

confidence: 80%

See 2 more Smart Citations

Hydrothermal Barium Titanate Thin‐Film Characteristics and their Suitability as Decoupling Capacitors

Raj

Lee

Kang

et al. 2010

Journal of the American Ceramic Society

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System integration and miniaturization with higher performance is driving thin‐film capacitor technologies toward higher capacitance densities with CMOS or organic package‐compatible processes for noise‐free power supply, power conversion, and efficient power management. The hydrothermal route can deposit crystalline ferroelectric films at low temperatures of <150°C. It is hence an attractive route for integrating high‐permittivity (K) thin‐film capacitors on both organic and silicon substrates. However, hydrothermal films are not commercialized so far because of their inferior insulation characteristics. Hydroxyl groups are attributed to high leakage currents, temperature‐dependent properties, and lower breakdown voltages. This paper discusses the dielectric characteristics such as capacitance density, leakage current, and temperature coefficient of capacitance of hydrothermal barium titanate films and correlates them with the water and OH groups in the film, morphology, stoichiometry, and crystallinity. With thermal treatment, majority of the OH groups can be removed leading to improved insulation characteristics. The room temperature I–V characteristics agreed with ionic conduction models for films baked at 160°C. A brief perspective is provided on the suitability of hydrothermal thin‐film capacitors for decoupling applications.

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Section: Resultssupporting

confidence: 94%

Section: Resultsmentioning

confidence: 75%

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Hydrothermal Barium Titanate Thin‐Film Characteristics and their Suitability as Decoupling Capacitors

Raj

Lee

Kang

et al. 2010

Journal of the American Ceramic Society

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“…The FTIR (Fourier-Transform InfraRed) spectroscopy and TGA (Thermo Gravimetry Analysis) studies of baked films were consistent with previous observations that the out-gassing of absorbed water molecules occurs at temperatures below 200°C and elimination of lattice hydroxyl defects begins at 250°C [17]. Baking of hydrothermal films can leave an oxygen vacancy as shown by Chien et al [12] as:…”

Section: Resultssupporting

confidence: 87%

Leakage current analysis of hydrothermal BaTiO3 thin films

2011

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Hydrothermal processing can deposit crystalline ferroelectric films at low temperatures of less than 150°C to achieve permittivities above 100. Such a process, hence, can be attractive in integrating thin film capacitors in organic, silicon or flex substrates. However, their poor insulation strength leading to high leakage current can prevent their wide acceptance. Lattice defects such as hydroxyl groups are attributed to their high leakage currents and lower Breakdown Voltages (BDVs). With appropriate thermal treatments, majority of the OH groups can be removed, leading to improved insulation characteristics. The leakage current behavior of as-synthesized and post-baked hydrothermal thin films are analyzed with various conduction models. The room temperature I-V characteristics are attributed to a combination of ionic and Space-Charge-Limited (SCLC) conduction models for films baked at 160°C while higher baking temperatures of 350°C agree well with Poole-Frenkel type conduction, with an activation energy of 0.57 eV for the defects. The defects, which are presumably OH groups or oxygen vacancies embedded in the barium titanate lattice, act as shallow traps and the trapping and detrapping results in easier conduction. A brief perspective is provided on the suitability of such a hydrothermal thin film capacitor approach for power supply applications.

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“…For such applications, particle size must be constricted to nanometer to micron sized single crystals. These small particles are typically synthesized by epitaxial [33], chemical solution deposition [34,35], polymeric precursor method [36], solvothermal [37], and hydrothermal methods [38]. Growth conditions for large single crystals have not been studied due to a lack of real applications.…”

Section: Introductionmentioning

confidence: 99%