Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV

Aspnes, D. E.; Studna, A. A.; Kinsbron, E.

doi:10.1103/physrevb.29.768

Cited by 331 publications

(109 citation statements)

References 36 publications

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“…Note that the calculated dielectric function deviates significantly when changing the layer thickness, which is consistent with the results of Ref. [18] shown for polycrystalline silicon thin films (see Figs. 4 and 5 of Ref.…”

Section: Resultssupporting

confidence: 91%

“…3 shows that the spectra are strongly influenced by the layer thickness. However, the proper thickness can be determined by applying the constraint for the imaginary part of the dielectric function ( 2 ) to gradually approach zero below the band gap energy [18]. In this approach a surface roughness layer was applyed with fixed value of thickness (determined by the Cauchy model with surface roughness).…”

Section: Resultsmentioning

confidence: 99%

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Approaches to calculate the dielectric function of ZnO around the band gap

et al. 2014

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Being one of the most sensitive methods for optical thin film metrology ellipsometry is widely used for the characterization of zinc oxide(ZnO), a key material for optoelectronics, photovoltaics, printable electronics and in a range of critical applications. The dielectric function of ZnO has a special feature around the band gap dominated by a relatively sharp absorption feature and an excitonic peak. In this work we summarize and compare direct (point-bypoint) and parametric approaches for the description of the dielectric function. We also investigate how the choice of the wavelength range influences the result, the fit quality and the sensitivity. Results on ZnO layers prepared by sputtering are presented.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Approaches to calculate the dielectric function of ZnO around the band gap

et al. 2014

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“…an average Si thickness of 0.135 nm), using the dielectric functions of bulk materials [32,33]. The absorption of crystalline Si, shown in Fig.…”

Section: Determination Of the Optical Response Of The Si ×2 Sanr Lmentioning

confidence: 99%

Large differences in the optical properties of a single layer of Si on Ag(110) compared to silicene

2014

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The optical properties of Si nanoribbons grown on Ag(110) under ultrahigh vacuum have been experimentally determined by use of in situ surface differential reflectance spectroscopy. Real-time measurements showed a clear transition of the optical response of the Si deposit at full coverage of the Ag(110) surface, corresponding to 0.8 monolayer of silicon. The spectra measured for the complete self-assembled nanoribbon layer are different from the reflectance spectrum calculated for a layer of silicene on silver, which rules out the possible silicenelike character of this layer. Furthermore, the dielectric function of the nanoribbons is calculated from the experimental data and is similar to the one of amorphous silicon, with a red shift of about 0.6 to 0.8 eV of the main absorption feature. This result indicates that the Si nanoribbons display a preferential sp 3 hybridization as in amorphous Si and not a partial sp 2 hybridization as expected for silicene.

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“…38 The nonlinear optical response of crystalline silicon has been shown to be dominated by free carrier absorption, with a much weaker contribution from gap filling and band structure renormalization. 39,40 As similar arguments hold for a-Si, we have calculated the dielectric function ˜(ω) of photoexcited a-Si by combining experimental dielectric function ˜e xp taken from Aspnes et al 41 with the free-carrier Drude response, 39 39 The dielectric function ˜(ω) was calculated from eq 1 for values of the free-electron density N eh ranging from 0 to 10 22 cm -3 . Results are shown in Figure 2a, where we have plotted the real and imaginary parts of the refractive index ˜1 /2 ≡ n + iκ.…”

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Photoconductively Loaded Plasmonic Nanoantenna as Building Block for Ultracompact Optical Switches

et al. 2010

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We propose and explore theoretically a new concept of ultrafast optical switches based on nonlinear plasmonic nanoantennas. The antenna nanoswitch operates on the transition from the capacitive to conductive coupling regimes between two closely spaced metal nanorods. By filling the antenna gap with amorphous silicon, progressive antenna-gap loading is achieved due to variations in the free-carrier density in the semiconductor. Strong modification of the antenna response is observed both in the far-field response and in the local near-field intensity. The large modulation depth, low switching threshold, and potentially ultrafast time response of antenna switches holds promise for applications ranging from integrated nanophotonic circuits to quantum information devices.KEYWORDS Plasmonics, nanoantennas, nanoparticles, ultrafast switches P lasmonics has emerged recently as an extremely promising technological research area, owing to rapid advances in nanofabrication and modeling.1-3 Miniaturized nanoplasmonic devices hold the potential to become one of the key nanotechnologies capable of combining electric and photonic components on the same chip.2 Of special interest for nanoscale control over light are metal nanoantennas, capable of concentrating optical fields into a subwavelength volume. [4][5][6][7] Analogous to their radiowave counterparts, nanoantennas support standing-wave electromagnetic resonances at visible and infrared wavelengths. Nanoantennas of various geometries have been applied successfully in nonlinear optics, 4,5,8,9 nanoscale photodetectors, 10 fluorescence enhancement, 11-14 high-harmonic generation, 15 and single-molecule detection. 16Active control over subwavelength optical fields is of importance for optical communication, sensing, and quantum information technology. In the terahertz range, the conductivity of semiconductors has been used recently to control the transport of terahertz waves using coupling to plasmonic modes on surfaces and nanostructures.17,18 Alloptical control over plasmons in the optical range has recently been demonstrated using planar metal films, 20,21 hole arrays, 22 and waveguided gold gratings. 23 For single small metal nanoparticles, ultrafast heating, and coherent vibrations of the metal particle give rise to broadening and a spectral shift of its plasmon resonances. [24][25][26] These effects are however not large enough for full optical control at the single-particle level for practical pump powers. In this communication, we explore the functionality of plasmonic nanoantennas as novel building blocks for ultracompact nonlinear photonic devices. We propose that the small footprint, large light-matter interaction strength, and fast dynamics of single plasmonic nanoantennas can be used to design a new type of optical switch for controlling both the far-field and near-field distribution of light. Tunability of the antenna by impedance loading of its nanogap using a dielectric medium has recently been described theoretically 27 and experimentally. 28 In th...

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Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV

Cited by 331 publications

References 36 publications

Approaches to calculate the dielectric function of ZnO around the band gap

Approaches to calculate the dielectric function of ZnO around the band gap

Large differences in the optical properties of a single layer of Si on Ag(110) compared to silicene

Photoconductively Loaded Plasmonic Nanoantenna as Building Block for Ultracompact Optical Switches

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