Dielectric properties of electron-beam-evaporated Nd2O3 thin films

Dharmadhikari, Vineet S.; Goswami, A.

doi:10.1016/0040-6090(82)90266-8

Cited by 48 publications

(9 citation statements)

References 17 publications

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“…[17] Nd 2 O 3 films have mainly been deposited by physical vapor deposition (PVD) techniques such as ultrahigh vacuum vapor deposition [14,18,19] and electron-beam evaporation. [16] Metal±organic chemical vapor deposition (MOCVD) has a number of potential advantages over PVD, including a large-scale production capability, good composition control, high film densities, high deposition rates, and excellent conformal step coverage. Despite these advantages, there have been very few reports on the MOCVD of lanthanide oxides.…”

Section: Introductionmentioning

confidence: 99%

“…These include, a capacitance density of 0.40±14 lF cm ±2 , a high dielectric constant (k = 12.64), a high breakdown field strength (more than 1.5 10 6 V cm ±1 ), a low dissipation factor (approximately 0.0045), and a low temperature coefficient of capacitance (approximately 350 ppm K ±1 ). [16] Nd 2 O 3 films also have a high resistivity (10 12 ±10 13 X cm) in a constant electric field at room temperature. [17] Nd 2 O 3 films have mainly been deposited by physical vapor deposition (PVD) techniques such as ultrahigh vacuum vapor deposition [14,18,19] and electron-beam evaporation.…”

Section: Introductionmentioning

confidence: 99%

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Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor

Loo

Potter

Jones³

et al. 2004

Chemical Vapor Deposition

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Thin films of neodymium oxide (Nd 2 O 3 ) have been deposited on Si(100) and GaAs(100) substrates by liquid injection MOCVD using the new neodymium alkoxide, [Nd(mmp) 3 ] (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe 2 CH 2 OMe). The films were grown over a wide range of substrate temperatures (250±550 C) and were found to be of high purity, with no detectable carbon. The films exhibited the cubic C-type Nd 2 O 3 phase or were amorphous depending on substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor

Loo

Potter

Jones³

et al. 2004

Chemical Vapor Deposition

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“…But the study of Nd 2 O 3 is seldom. The charge transfer in amorphous Nd 2 O 3 films prepared by electron beam evaporation in form of Al/Nd 2 O 3 /Al sandwich was studied by [16,17].…”

Section: Introductionmentioning

confidence: 99%

Electrical conduction processes in neodymium oxide thin films prepared on Si(1 0 0) substrates

Dakhel

2004

Journal of Alloys and Compounds

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“…In spite of the extensive study of REOs as insulators in MOS structures [8 -10], the study of Nd 2 O 3 , as far as we know, is absent from the literature. The optical properties of Nd 2 O 3 films have been studied previously [11], as has their electrical conduction [12,13].…”

Section: Introductionmentioning

confidence: 99%

Characterisation of Nd2O3 thick gate dielectric for silicon

Dakhel

2004

phys. stat. sol. (a)

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Thin neodymium films were prepared by the reactive synthesis method on Si (P) substrates to form MOS devices. The oxide films were characterised by UV absorption spectroscopy, X-ray fluorescence (EDXRF) and X-ray diffraction (XRD). The ac conductance and capacitance of the devices were studied as a function of frequency in the range 100 Hz-100 kHz, of temperature in the range 293-473 K and of gate voltage. It was proved that a suitable formalism to explain the frequency dependence of the ac conductivity and capacitance of the insulator is controlled by a universal power law based on the relaxation processes of the hopping or tunnelling of the current carriers between equilibrium sites. The temperature dependence of the ac conductance at the accumulation state shows a small activation energy of about 0.07 eV for a MOS device with amorphous neodymium oxide. The temperature dependence of the accumulation capacitance for a MOS structure with crystalline neodymium oxide shows a maximum at about 390 K; such a maximum was not observed for the structure with amorphous neodymium oxide. The method of capacitance-gate voltage (C-V g ) measurements was used to investigate the effect of annealing in air and in vacuum on the surface density of states (N ss ) at the insulator/semiconductor (I/S) interface. It was concluded that the density of surface states in the mid-gap increases by about five times while the density of the trapped charges in the oxide layer decreases by about eight times when the oxide crystallises into a polycrystalline structure.

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Dielectric properties of electron-beam-evaporated Nd2O3 thin films

Cited by 48 publications

References 17 publications

Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor

Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide Precursor

Electrical conduction processes in neodymium oxide thin films prepared on Si(1 0 0) substrates

Characterisation of Nd2O3 thick gate dielectric for silicon

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