2004
DOI: 10.1016/j.jallcom.2004.01.009
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Electrical conduction processes in neodymium oxide thin films prepared on Si(1 0 0) substrates

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Cited by 20 publications
(7 citation statements)
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“…The rare-earth lanthanide Neodymium oxide (Nd 2 O 3 ) can act as either Lewis acid or Lewis base . The hygroscopic nature of Nd 2 O 3 leads to the formation of neodymium hydroxide (Nd­(OH) 3 ) on its surface, and the hydroxyl groups or water molecules present on the Nd 2 O 3 form a weak hydrogen bond and are expected to act as ion-exchange sites or carriers of proton to contribute toward proton conductivity. It is also proven that by incorporating neodymium oxide, a hygroscopic rare-earth oxide and a dopant for H + ion conduction into the Nafion structure .…”
Section: Introductionmentioning
confidence: 99%
“…The rare-earth lanthanide Neodymium oxide (Nd 2 O 3 ) can act as either Lewis acid or Lewis base . The hygroscopic nature of Nd 2 O 3 leads to the formation of neodymium hydroxide (Nd­(OH) 3 ) on its surface, and the hydroxyl groups or water molecules present on the Nd 2 O 3 form a weak hydrogen bond and are expected to act as ion-exchange sites or carriers of proton to contribute toward proton conductivity. It is also proven that by incorporating neodymium oxide, a hygroscopic rare-earth oxide and a dopant for H + ion conduction into the Nafion structure .…”
Section: Introductionmentioning
confidence: 99%
“…Generally, the junctions between p-Si and metals with high work functions such as gold or aluminium are expected to form an ohmic contact. Therefore, so far many attempts have been made to realize the formation of a rectifying contact or modification of the barrier height or the continuous control of the barrier height using an organic semiconductor layer [5][6][7][8][9][10][11][12] or an insulating layer and a chemical passivation procedure [21][22][23][24][25][26][27][28][29] at certain metal/inorganic semiconductor interfaces, or to determine the characteristic parameters of organic films [5][6][7][8][9][10][11][12]. In the passivation process case, inorganic/organic semiconductor diodes may be sensitive probes that are useful for increasing the quality of devices fabricated using an organic semiconductor in establishing processes for minimizing surface states, surface damage and contamination.…”
Section: Introductionmentioning
confidence: 99%
“…Some researchers [14][15][16][17][18] have studied the electronic properties of the polymer/PPy [14,15] and PPy/inorganic semiconductor [16][17][18] heterostructures from their I -V , C-V and conductivity-temperature characteristics. Some activities have been also focused on understanding and controlling key parameters such as the interface potential barriers [16][17][18][19][20][21][22][23][24][25][26][27]. Thicker organic interlayers of the conjugated molecules have also been successfully used to modify effective barriers [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…In this study, the glassy phase of sintered body is expected to be the mixture of SiO 2 and additive. Although the real refractive index of glassy phase cannot be calculated, it is possible to estimate the change in refractive index by addition of additive to SiO 2 from the refractive indices of additives: Y 2 O 3 (1.92), CaO (1.83), YAG (1.82), SrO (1.81), AlN (1.96), Sm 2 O 3 ,(1.93) Sc 2 O 3 (1.90), HfO 2 (1.92), La 2 O 3 (1.90), CeO 2 (1.94), Nd 2 O 3 (1.89), Al 2 O 3 (1.75),, and MgO (1.72), and the densities of the additives. The refractive indices and densities of binary additives were calculated on the basis of 3/1 ratio.…”
Section: Resultsmentioning
confidence: 99%