Dielectric properties and current–voltage nonlinear behavior of Ca1−xSrxCu3Ti4O12 ceramics

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

“…CCTNO (Ni-doped) [16] and B 2 O 3 doped CCTO [17] considerably increase the dielectric constant because the dopants enhance the grain growth rate in the sintering process. Sr-CCTO [18] exhibits current-voltage nonlinearity, for impedance characteristics of grain and grain boundary of CCTO ceramics are apparently adjusted by Sr doping. Dielectric loss effectively decreases when CuF 2 [19] or MnO 2 [20] is added.…”

Dielectric properties of hexagonal perovskite ceramics prepared by different routes

“…Complex impedance spectroscopy is a powerful tool for separating the grain, the grain boundary and the interface effects [24,25]. Fig.…”

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

“…This non-saturating behavior of reverse current may be explained in terms of the image force lowering of Schottky barrier height [28] and the presence of the interfacial insulator layer at metal-semiconductor interface [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The leakage current was also found to be very sensitive to the annealing temperature and the magnitude of the leakage current for rutile phase is 15 times lower than the anatase phase's.…”