Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature

Alptekin, Sebahaddin; Tataroğlu, A.; Altındal, Ş.

doi:10.1007/s10854-019-00998-7

Cited by 35 publications

(8 citation statements)

References 29 publications

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“…It also increases with temperature at all frequencies. The frequency dependence of r ac is due to the movement of mobile charge carriers and the polarization effects [29][30][31][32]. The increase of r ac with temperature is attributed to the impurities, which locate at the grain boundaries.…”

Section: Complex Electrical Conductivitymentioning

confidence: 99%

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Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.

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Section: Complex Electrical Conductivitymentioning

confidence: 99%

“…e 0 -Log f. b e 00 -Log f and (c) tand-Log f plots at various temperatures the short range mobility of charge carriers. The increase of M 0 and M 00 with frequency is attributed to the mobility of charge carriers under the action of an induced electric field[25][26][27][28][29][30][31].…”

mentioning

confidence: 99%

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Türkay

Tataroğlu

2021

J Mater Sci: Mater Electron

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“…Both real (M′) and imaginary (M′′) components of the electric modulus increase as the frequency increases from 8 Hz to 5 MHz. They are low in the low-frequency regime and this indicates a small contribution of electrode polarization that can be connected with the long-range mobility of charge carriers [47]. After 1 KHz, we can observe a rapid increase in M′ towards saturation associated with the contribution of grains (intra-grain) at high frequencies.…”

Section: Electric Modulusmentioning

confidence: 76%

Exploration of the charge transport mechanism, complex impedance, dielectric/electric modulus and energy storage characteristics of the aloe vera (Aloe Barbadensis Miller) plant

Nikolic,

Singh,

Bogdanovic

2024

Mater. Res. Express

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Complex impedance spectra at room temperature in the frequency range of 8 Hz – 5 MHz were measured on freshly cut leaf sections of the Aloe vera plant by AC impedance spectroscopy. They were analyzed using a classical “brickwork” equivalent circuit composed of grain and grain boundary contributions commonly applied to solid-state materials. The obtained grain resistance/capacitance was 0.4 M/72 pF and grain boundary resistance/ capacitance was 66.4 M/50 nF. The determined conductivity changed according to the Jonscher power law with DC of 4.0210-5 (m)-1 and frequency constant of 0.92 characteristic for hopping as the conduction mechanism. Analysis of dielectric permittivity and electric modulus confirmed the non-Debye relaxation behavior. Nyquist plots for electric modulus revealed conductivity relaxation in the low frequency attributed to grain boundaries and impedance modulus displayed dielectric relaxation in the high frequency region associated with grains. A correlation has been established among the investigated parameters, morphology, and EIS-derived simulated parameters.

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“…The maximum capacitance is given by the formula of C ac ¼ C i ¼ e 0 e 0 A=d i depending on the interlayer capacitance in the accumulation region. Furthermore, the loss tangent (tan d) is addressed the The e 0 values increased in the inversion region by the decreasing frequency and showed peak behaviors due to interface states and series resistance [28]. Furthermore, the peak intensity and peak positions were affected by the frequency and voltage changes depending on the Maxwell-Wagner polarization.…”

Section: Resultsmentioning

confidence: 98%

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo 5 S 8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo 5 S 8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo 5 S 8 /p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage-and frequencydependent dielectric properties of the Au/CuCo 5 S 8 /p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from -2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e 0 ) and dielectric loss (e 00 )), electric modulus (M 0 and M 00 ), and ac electrical conductivity (r) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo 5 S 8 /p-Si heterojunction device has the frequency-and voltage-dependent dielectric characteristics, and can be considered as switching applications.

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Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature

Cited by 35 publications

References 29 publications

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

Exploration of the charge transport mechanism, complex impedance, dielectric/electric modulus and energy storage characteristics of the aloe vera (Aloe Barbadensis Miller) plant

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

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