Dielectric modulated GaAs1−
 
 x
 Sb
 X
 FinFET as a label-free biosensor: device proposal and investigation

Dixit, Ankit; Samajdar, Dip Prakash; Bagga, Navjeet

doi:10.1088/1361-6641/ac0d97

Cited by 20 publications

(7 citation statements)

References 44 publications

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“…These FoMs can be further used to define the sensitivity metrics of the proposed label free biosensor as defined in equation (1). The equations for each parameter are defined below by equations (2)- (7) V DS = 0.05V; V GS = 1.6V; L Cav = 200nm 2.1 55.00 22.5 2.88 InGaAs/Si HTFET [34] V DS = 1.0 V; V GS = 1.5V; 12 90.00 -130.21 RSD GaAs 1−x Sb x FinFET [35] V DS = 0. Figure 11(a) shows that the maximum value of the absolute sensitivity for S ION and S CR with respect to the empty cavity condition.…”

Section: A Bio Air Airmentioning

confidence: 99%

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor

Dixit,

Samajdar,

Shukla

et al. 2024

Phys. Scr.

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Dielectric Modulated (DM) biosensors are being developed for label-free biosensing based on varying dielectric constants of the cavity region. In this paper, we proposed a GaAs1-xSbx based cylindrical DM biosensor. The chosen device geometry provides enhanced gate control and increases cavity area compared to the planar devices. This bestows larger dwelling space to the biomolecules. In our work, we have investigated the sensing capability of the proposed biosensor for Biotin (k=2.63), Bacteriophage (k=6.3), and Gelatin (k=12); whereas, the proposed study is applicable in all types of biomolecules which are characterized by the dielectric constants. The deviation in the effective oxide thickness (EOT) due to the variation in permittivity of the cavity area modulates the channel conductance and, in turn, ON current and threshold voltages (Vth). Thus, these parameters can be used for analyzing the sensitivity. For the gelatin biomolecule, the maximum computed sensitivity with regard to the OFF to ON current ratio and saturation current is 41.20% and 16.68%, respectively. Further, we also investigated the sensitivity metrics for the charge-carrying biomolecules using trap models employed in TCAD simulations.

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Section: A Bio Air Airmentioning

confidence: 99%

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor

Dixit,

Samajdar,

Shukla

et al. 2024

Phys. Scr.

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“…This defines the ability of the H 2 gas sensor to detect the slight variation of the gas pressure with higher accuracy in terms of the work function modulationinduced electrical characteristic variation. The generalized expression to calculate the sensitivity is given as [27][28][29][30]:…”

Section: Sensitivity Analysis Of Jlnc Finfet At Different Pressurementioning

confidence: 99%

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

Gandhi,

Jaisawal,

Rathore

et al. 2024

Smart Mater. Struct.

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This work demonstrates the reliability-aware analysis of the Junctionless Negative Capacitance (NC) FinFET employed as a hydrogen (H2) gas sensor. Gate stacking of the ferroelectric (FE) layer induces internal voltage amplification owing to the NC property, thus, improving the sensitivity of the baseline Junctionless FinFET. A well-calibrated TCAD model is used to investigate the sensing characteristics of the proposed FinFET-based H2 sensor by employing the Palladium (Pd) metallic gate as a sensing element. The mechanism involves the transduction of H2 gas molecules over the metal gate; due to the diffusion process, some atomic hydrogen diffuses into the metal. The H2 gas absorption at the metal surface causes a dipole layer formation at the gate and oxide interface, which changes the metal gate work function. As a result, this change in the work function can be used as a sensing parameter of the proposed gas sensor. Further, the threshold voltage and other electrical characteristics, such as output conductance, transconductance, and drain current are examined for sensitivity analysis for both NC and without NC JL FinFET at different pressure ranges, keeping the temperature constant (i.e., 300K). The device variation, i.e., Fin thickness, Fin height, doping and thickness of HfO2 ferroelectric layer, etc., on sensor sensitivity has been evaluated through extensive simulation. This paper also presents a detailed investigation of the sensor's reliability in terms of work function variation, random dopant fluctuation, trap charges, and device aging, i.e., end of a lifetime (EOL). At last, the acquired results are compared with earlier reported data, which justifies the profound significance of the proposed Junctionless Negative Capacitance (JLNC) FinFET-based H2 gas sensor.

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“…The presence of biomolecules alters the dielectric constant and capacitance of the gate, thereby inducing a significant change in the threshold voltage and drain current. To enhance the sensitivity of the biosensor, various dielectric modulated biosensors such as Impact Ionization MOSFET [5,6], Tunnel FET [7][8][9][10], multi gate FET [11][12][13][14], Junctionless FET [15][16][17][18][19], and high electron mobility transistors [20,21] have been introduced, each with distinct current transport mechanisms. In diverse configurations, a range of parameters are taken into account to evaluate the responsiveness of the biosensor.…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

Ahangari

2024

Semicond. Sci. Technol.

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In this study, a biosensor utilizing a dielectric-modulated Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistor (TFT) is introduced. Thin film transistor biosensors have garnered significant attention due to their heightened sensitivity, scalable nature, low power consumption, rapid electrical detection capabilities, and cost-effective means of mass production. By embedding a nano-cavity within the gate insulator of the TFT, biomolecules can accumulate within. As each biomolecule possesses its own dielectric constant, it modulates the effective gate capacitance and, subsequently, changes the channel conductance. To assess the sensitivity of the biosensor, variation in saturation current after the absorption of biomolecules with respect to the drain current in the case of an air-filled cavity has been considered as a precise measure. The efficient operation of a biosensor is contingent upon the sensitivity being highly dependent on the dielectric constant of the biomolecules that are accumulated within the nano-cavity. Consequently, a comprehensive evaluation has been conducted to ascertain the impact of critical design parameters which have the potential to affect the sensitivity of the biosensor. Additionally, a statistical analysis based on coefficient of variation measure has been performed to evaluate the susceptibility of the biosensor's sensitivity to variations in geometrical and physical design parameters. The utilization of label-free detection methodology in this device presents a notable advantage due to its compatibility with the fundamental CMOS processing technology and its cost-effective potential for macro production.

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Dielectric modulated GaAs₁₋ _x Sb _X FinFET as a label-free biosensor: device proposal and investigation

Cited by 20 publications

References 44 publications

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

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Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: device proposal and investigation

Cited by 20 publications

References 44 publications

Biomolecule detection using GaAs1−xSbX FET based dielectric modulated label-free biosensor

Biomolecule detection using GaAs1−xSbX FET based dielectric modulated label-free biosensor

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

Contact Info

Product

Resources

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Dielectric modulated GaAs₁₋ _x Sb _X FinFET as a label-free biosensor: device proposal and investigation

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor

Biomolecule detection using GaAs_1−xSb_X FET based dielectric modulated label-free biosensor