Dielectric long-time relaxation of amorphous materials at low temperatures

Höhler, Reinhard; Münzel, J.; Kasper, G.; Hunklinger, Siegfried

doi:10.1103/physrevb.43.9220

Cited by 28 publications

(14 citation statements)

References 24 publications

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“…Höhler et al 25 made an in-depth study of the temperature dependence of dielectric relaxation in three glasses, including low temperatures, and we can interpret that study in terms of the present theory. The total current can then be written as the sum of the two, with the contribution from thermal excitation becoming equal to that from tunneling at some "crossover" temperature, which will vary from material to material.…”

Section: Comparison To Experimentssupporting

confidence: 67%

“…The present authors are aware of just one study of dielectric relaxation current at low temperature, that due to Höhler et al 25 for a SiO 2 -based commercial glass, the electrolytic glass LiCl· 5H 2 O, and the ferroelectric glass Pb 0.9 La 0.1 Zr 0.65 Ti 0.35 O 3 . For a parallel plate capacitor of thickness d subjected to a voltage V, the linear dependence on E becomes a linear dependence on V and an inverse dependence on d ͑i.e., E = V / d͒, so we have three dependencies that can be tested separately.…”

Section: B Comparison To Experimentsmentioning

confidence: 95%

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A semiclassical model of dielectric relaxation in glasses

Jameson

Harrison

Griffin

et al. 2006

Journal of Applied Physics

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A semiclassical double-well model of dielectric relaxation current in glasses is extended to ͑i͒ nonzero temperature, ͑ii͒ complex bias histories, and ͑iii͒ strong electric fields. At finite temperature, thermal excitation yields a contribution linear in temperature, which adds to the temperature-independent contribution from tunneling from the zero-temperature case. Both contributions vary linearly with applied field and have a time dependence of 1 / t n . Experimental measurements in three different glasses are shown to agree with this prediction, and it is shown how to use such measurements to estimate the material parameters t 0 and 0 . For complex bias histories, a principle of superposition is found, as observed experimentally, if the applied fields are weak compared to the material parameter E 0 , estimated to be on the order of 10 7 V / m. For an electric field pulsed periodically from 0 to E, the current can be decomposed into a fast contribution due to particles tunneling back and forth every cycle of the field, and a slow residual contribution whose time dependence is the same as that for a continuous bias, but whose magnitude is reduced by the duty cycle of the periodic bias. For a sinusoidal electric field, thermal excitation gives a contribution to the dielectric constant that varies linearly with temperature and has a real part that varies logarithmically with frequency and an imaginary part that varies as the inverse tangent of frequency. For tunneling, both parts are independent of temperature and vary approximately as the logarithm of frequency, a dependence observed experimentally and almost indistinguishable from that suggested by the 1 / t n current response to a step voltage. For strong electric fields, the current that flows after the field is removed is found to be dominated by particles that fell forward when the field was on. Since particles fall forward quickly but tunnel back slowly, even strong fields applied for a short period of time can produce a large, long-lasting return current. These analyses lead to a number of testable predictions, and should be useful for understanding the phenomenon of dielectric relaxation and its impact on electronic devices. customary nowadays to say that a dielectric "obeys the Curie-von Schweidler law" if it exhibits this time dependence. Dielectric relaxation is a ubiquitous phenomenon, and a short list of glasses in which it has been observed includes

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Section: Comparison To Experimentssupporting

confidence: 67%

Section: B Comparison To Experimentsmentioning

confidence: 95%

A semiclassical model of dielectric relaxation in glasses

Jameson

Harrison

Griffin

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…To the authors' knowledge, the study by Höhler et al [15] is the only study that has been made of dielectric relaxation at cryogenic temperatures (which is distinct from other low-temperature dielectric phenomena, such as those studied by Rosenberg et al [16] and Salvino et al [17]). Nonetheless, this study does appear consistent with the semiclassical theory described above, which treats dielectric relaxation current at all temperatures as arising from a common density of states [14].…”

Section: Methodsmentioning

confidence: 97%

Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3

Jameson¹,

Ngo²,

Benko³

et al. 2011

Journal of Non-Crystalline Solids

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“…We know from Höhler's formula that tunneling probability depends on mass. 27 Therefore, transport of ions between granules necessitates longer relaxation times compared to electrons. Accordingly, one expects at high frequencies ionic and electronic polarizations to occur within grains with smaller displacement.…”

Section: Resultsmentioning

confidence: 99%

Comparison of dielectric dispersion of Al2O3 and Se thin films

Deǧer

2001

Journal of Applied Physics

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Leakage mechanisms and dielectric properties of Al 2 O 3 / TiN -based metal-insulator-metal capacitors Appl. Phys. Lett. 83, 4429 (2003); 10.1063/1.1629373Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y 2 O 3 , Ta 2 O 5 and Al 2 O 3 thin film We investigate the frequency and temperature dependence of the dielectric conductivity and dielectric constant of Al 2 O 3 thin films having ionic structure and compare the results with those obtained for Se thin films having homopolar structure in the 0.1-100 kHz frequency range and in the 100-400 K temperature range. Our samples have a metal-insulator-metal configuration. Oxide-layer thickness ranges between 50 and 1550 Å for Al 2 O 3 films and 150 and 8500 Å for Se films. The existence of a minimum in the imaginary part of dielectric constant versus frequency curves for each thickness of Al 2 O 3 films leads us to conclude that two types of polarization mechanisms are dominant in different frequency regions, depending on the structure of Al 2 O 3 samples, but that only one mechanism dominates in Se samples, which do not have such minima in the imaginary part of their dielectric constant versus frequency curves.

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Dielectric long-time relaxation of amorphous materials at low temperatures

Cited by 28 publications

References 24 publications

A semiclassical model of dielectric relaxation in glasses

A semiclassical model of dielectric relaxation in glasses

Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3

Comparison of dielectric dispersion of Al2O3 and Se thin films

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