Dielectric isolated integrated circuit substrate processes

Davidsohn, U.S.; Lee, F.

doi:10.1109/proc.1969.7332

Cited by 25 publications

(5 citation statements)

References 5 publications

(3 reference statements)

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“…30 Further advantages of substrate passivation effects have been reported in silicon IC technology. [31][32][33] For instance, dielectric or polymer isolation has proven to be effective in lowering substrate losses and raising inter-device breakdown voltages, as well as improving the radiation hardness.…”

Section: Resultsmentioning

confidence: 99%

Investigation of NiCr Thin Film Resistors for InP-Based Monolithic Microwave Integrated Circuits (MMICs)

Driad

Krieg

Geldmacher

et al. 2011

J. Electrochem. Soc.

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We report a systematic study of nickel chrome (NiCr) thin film resistors (TFRs) used as resistors in InP-based monolithic microwave integrated circuits (MMICs). The effects of fabrication process parameters (such as surface treatments or thermal cycles) and substrate materials on the electrical properties of NiCr TFRs are discussed. After completion of MMIC fabrication, the NiCr thin film resistors were found to exhibit lower sheet resistance (R sh ) as compared to the as-deposited films. The origin of this variation has been found to be mainly related to the post-NiCr thermal cycles involved in the IC process technology. In contrast, the R sh values of NiCr TFRs deposited on GaAs or SiN x coated substrates were almost unaffected by thermal annealing. Hence, a thin SiN x passivation layer on the InP substrate has been integrated in the InP-based MMIC process to avoid the NiCr-InP interaction. As a result, NiCr thin film resistors with high sheet resistance uniformity and reproducibility, as well as low temperature coefficient of resistance (TCR) have been achieved. Moreover, the use of a SiN x layer on the InP substrate was also found to improve the inter-device isolation.Although novel material resistors have been developed, nickel chromium (NiCr), and tantalum nitride (TaN) remain the thin film resistors (TFRs) of choice for most applications in the microelectronic industry because of their wide resistivity range, low temperature coefficient of resistance (TCR), good reproducibility and good compatibility with various integrated circuit technologies. In particular, NiCr and related materials have been the subject of numerous investigations, 1-12 covering different aspects of deposition techniques and material properties, as well as potential applications.In monolithic microwave integrated circuit (MMIC) technologies, TFRs are extensively used in feedback circuits, bias circuits, and as terminations. Owing to their properties, they are particularly attractive components for analog and mixed signal circuits, which require precise control of the resistance and thermal stability of the TFR, such as operational amplifiers, and analog to digital converters (ADCs).NiCr resistors are usually deposited as very thin layers (tens of nanometers), directly on the substrate or on dielectric polymer layer, using standard sputtering or e-beam evaporation techniques. As for other thin film resistors, the TCR and resistance of NiCr has, however, been reported to be affected by various process parameters (temperature, composition) and environmental conditions, 2,7,8 which might be at the origin of various performance and reliability problems encountered in integrated circuit.Concerning the properties of NiCr films deposited on III-V substrates, only a few results have, so far, been reported in the literature. Shen et al. 1 compared the characteristics of NiCr, TaN and NiV (nickel vanadium) thin film resistors intended for use in GaAsbased power amplifiers. While TaN and NiV TFRs were directly sputtered on GaAs substrates, NiCr fi...

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Section: Resultsmentioning

confidence: 99%

Investigation of NiCr Thin Film Resistors for InP-Based Monolithic Microwave Integrated Circuits (MMICs)

Driad

Krieg

Geldmacher

et al. 2011

J. Electrochem. Soc.

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“…and are the densities of the glass and of water, respectively. The leaky Rayleigh wave velocity is related to by (3) where Re stands for the real part. The transverse wave velocities which satisfy (2) and (3) simultaneously with the measured and for the Si-B-O glasses of the four specimens are listed in Table I. Young's moduli, , and Poisson's ratios calculated from the longitudinal and transverse wave velocities and the density in the Table I are plotted in Figs.…”

Section: B Leaky Surface Acoustic Wave Velocitymentioning

confidence: 99%

“…The method was also applied to bond two silicon substrates with a glass layer [2]. Dielectrically isolated (DI) integrated circuit substrates [3] were fabricated using this method. The DI integrated circuit fabricated by the FHD method has a high breakdown voltage, a high integration density, a small stray capacitance and other good qualities [2].…”

Section: Introductionmentioning

confidence: 99%

Elastic properties measurement of glass layers fabricated on silicon wafers for microelectronics and micromachines

Tsukahara

Ohira

Yanaka

et al. 1995

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Elastic properties such as the Young's modulus, the Poisson's ratio and the density of Si-B-O glass layers fabricated on (100) silicon substrates by the flame hydrolysis deposition method were measured. Thicknesses of the layers were about 20 m. It was found that the Young's modulus decreased with the boron dopant concentration. The Poisson's ratio was about 0.26 regardless of the boron dopant concentration. The measured elastic properties will be used in the design of micromachines fabricated with silicon substrates and glass layers.

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“…Polycrystalline silicon has been studied for contact, gate metal, and resistor applications in integrated circuits for more than a decade (1)(2)(3)(4)(5)(6)(7)(8)(9). Because of the uncontrollable nature of morphology, it is rare to find reproducible data on the basic properties of the polycrystalline films in literature as compared with single crystalline silicon (10).…”

mentioning

confidence: 99%

Heat‐Treatment Effect on Boron Implantation in Polycrystalline Silicon

Lee

1982

J. Electrochem. Soc.

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Polycrystalline silicon (LPCVD) has been studied for contact, gate metal, and resistor application in integrated circuits. In this study the effect of heat‐treatment on boron‐implanted low pressure chemical vapor deposited polycrystalline is investigated. In general, grain growth and morphology change take place in both preimplant and postimplant heat‐treatment. Namely, the poly‐Si films after heat‐treatment consist of more equal axed grains than the mosaic dendrite structures in the untreated samples. However, the pre‐implant heat‐treatment appeared to be more effective for grain growth because of lack of impurity hindrance of grain boundary movement. The sheet resistivity of the pre‐implant heat‐treated samples is predominantly controlled by ion redistribution, and that of the postimplant annealed samples is controlled by both morphology change and ion redistribution. Both kinds of samples showed much lower resistivity due to heat‐treatment reduction of grain boundary trapping centers and significant resistivity reversal anneal due to redistribution of the implanted ions.

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Dielectric isolated integrated circuit substrate processes

Cited by 25 publications

References 5 publications

Investigation of NiCr Thin Film Resistors for InP-Based Monolithic Microwave Integrated Circuits (MMICs)

Investigation of NiCr Thin Film Resistors for InP-Based Monolithic Microwave Integrated Circuits (MMICs)

Elastic properties measurement of glass layers fabricated on silicon wafers for microelectronics and micromachines

Heat‐Treatment Effect on Boron Implantation in Polycrystalline Silicon

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