Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation

Singh, Rahul; Kaim, Shweta; Medhashree, Rani; Kumar, Anil; Kale, Sumit

doi:10.1007/s12633-021-01191-4

Cited by 22 publications

(3 citation statements)

References 37 publications

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“…Rahman et al developed a compact I-V model of a monolayer MoS 2 -channel-based DMFET for detection of biomolecules in dry environments [ 85 ]. Using a SILVACO ATLAS 2D Device simulator, Singh et al proposed a dielectrically engineered Schottky barrier MOSFET for operation in overlapped biosensing mode [ 86 ].…”

Section: Effective Strategies To Overcome Screening Effectmentioning

confidence: 99%

Advancement and Challenges of Biosensing Using Field Effect Transistors

Thriveni

Ghosh

2022

Biosensors

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Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. The device physics of this sensor is now well understood due to the emergence of several numerical modelling and simulation papers over the years. The pace of advancement along with the knowhow of theoretical concepts proved to be highly effective in detecting deadly pathogens, especially the SARS-CoV-2 spike protein of the coronavirus with the onset of the (coronavirus disease of 2019) COVID-19 pandemic. However, the advancement in the sensing system is also accompanied by various hurdles that degrade the performance. In this review, we have explored all these challenges and how these are tackled with innovative approaches, techniques and device modifications that have also raised the detection sensitivity and specificity. The functional materials of the device are also structurally modified towards improving the surface area and minimizing power dissipation for developing miniaturized microarrays applicable in ultra large scale integration (ULSI) technology. Several theoretical models and simulations have also been carried out in this domain which have given a deeper insight on the electron transport mechanism in these devices and provided the direction for optimizing performance.

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Section: Effective Strategies To Overcome Screening Effectmentioning

confidence: 99%

Advancement and Challenges of Biosensing Using Field Effect Transistors

Thriveni

Ghosh

2022

Biosensors

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“…One of the simplest solutions for increasing the switching speed between the OFF and ON states of a MOSFET device is by replacing the heavily doped diffusions found at the source and drain terminals, by high-quality metal/semiconductor Schottky diodes whose defect density at this interface is well controlled and minimized [15][16][17][18]. By properly controlling the Schottky barrier height (SBH) at these interfaces, it is possible to promote lower subthreshold slope in the transistor because of the lack of a depletion region at the metal side, which in turn, translates into faster switching operation [19,20].…”

Section: Introductionmentioning

confidence: 99%

Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET

Molina-Reyes,

Cuellar-Juarez

2023

Nanotechnology

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By using a simple device architecture along with a simple process design and a low thermal-budget of a maximum of 100 °C for passivating metal/semiconductor interfaces, a Schottky barrier MOSFET device with a low subthreshold slope of 70 mV dec−1 could be developed. This device is enabled after passivation of the metal/silicon interface (found at the source/drain regions) with ultra-thin SiO x films, followed by the e-beam evaporation of high- quality aluminum and by using atomic-layer deposition for HfO2 as a gate oxide. All of these fabrication steps were designed in a sequential process so that a gate-last recipe could minimize the defect density at the aluminum/silicon and HfO2/silicon interfaces, thus preserving the Schottky barrier height and ultimately, the outstanding performance of the transistor. This device is fully integrated into silicon after standard CMOS-compatible processing, so that it could be easily adopted into front-end-of-line or even in back-end-of-line stages of an integrated circuit, where low thermal budget is required and where its functionality could be increased by developing additional and fast logic.

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“…As the gate length is decreasing the gate loses its control over the channel which gives scope for Short Channel Effects (SCEs) and leakage currents. Some of the short channel effects are threshold voltage roll-off, drain induced barrier lowering (DIBL), hot electron effects etc [10][11][12][13]. To alleviate these SCEs the gate control on the channel should be enhanced and to achieve this, devices with multiple gates are one of the viable options.…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation of GAA Nanosheet FET with Varied Geometrical and Process Parameters

Neelam

Prithvi

2022

Silicon

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Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in sub-7-nm technology. This paper provides insights into the variations of DC FOMs for different geometrical con gurations of the NSFET. In this script, DC performance of 3D GAA NSFET is analyzed by varying the width, thickness of the device. Moreover, the gate length is scaled from 20 nm to 5 nm to check for the device suitability in logic applications. The thickness and width of each nanosheet are varied in the range of 5 to 9 nm, and 10 to 50 nm respectively to analyse the performance dependency on the geometry of the device. The impact of geometry of NSFET on various DC performance metrics like transfer characteristics, sub-threshold swing (SS), on current (I ON ), off current (I OFF ), switching ratio (I ON /I OFF ), threshold voltage (V th ) and drain induced barrier lowering (DIBL) are studied. On top of that, the device's electrical characteristics are analyzed for a wide range of temperatures from -43 o C to 127 o C to identify the temperature compensation point and is observed at V GS = 0.55 V and I D = 3.86 × 10 −6 A. Furthermore, the important process parameter, work function variations on transfer characteristics of the device is analyzed. Moreover, the analyses tell that, for sub -7 nm, the NSFET is a potential device for high performance and good logic applications.

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Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation

Cited by 22 publications

References 37 publications

Advancement and Challenges of Biosensing Using Field Effect Transistors

Advancement and Challenges of Biosensing Using Field Effect Transistors

Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET

Performance Evaluation of GAA Nanosheet FET with Varied Geometrical and Process Parameters

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