Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET
Joel Molina-Reyes,
Adriana Mercedes Cuellar-Juarez
Abstract:By using a simple device architecture along with a simple process design and a low thermal-budget of a maximum of 100 °C for passivating metal/semiconductor interfaces, a Schottky barrier MOSFET device with a low subthreshold slope of 70 mV dec−1 could be developed. This device is enabled after passivation of the metal/silicon interface (found at the source/drain regions) with ultra-thin SiO
x
films, followed by the e-beam evaporation of high- quality aluminum and by usi… Show more
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